白方祥 研究論文など
[1] 卒業論文 4元化合物CdInGaS4の光学的性質 1981年 東京理科大学工学部電気工学科 [2] 修士論文 カルコパイライト構造を持つ三元化合物半導体の格子振動に関する研究 1983年 大阪大学工学部電子工学科 [3] 博士論文 PREPARATION AND CHARACTERIZATION OF InGaPAs ALLOYS 1987年 大阪大学基礎工学部（物理系専攻電気工学分野）
[4] Publications 1983 1) Pressure Dependence of Raman Modes in ZnSiP2 Crystal S.Shirakata, T.Shirakawa, J.Nakai Il Nuovo Cimento, Vol.2D, No.6 (1983) pp.2058-2063.
1985 2) LPE Growth of In1-xGaxP0.96As0.04 on GaAs Substrate by Two-Phase Melt Method S.Shirakata, M.Kondo, A.Tsushi, T.Nishino, Y.Hamakawa, T.Kariya Japanese Journal of Applied Physics, Vol.24, No.5 (1985) pp.524-529. 3) A Study on LPE Growth of In1-xGaxP1-yAsy (y≒0) on (100) GaAs Substrate M.Kondo, S.Shirakata, A.Tsushi, T.Nishino, Y.Hamakawa Japanese Journal of Applied Physics, Vol.24, No.7 (1985) pp.806-811.
1986 4) Electroreflectance and Photoluminescence Studies of In1-xGaxP1-yAsy Lattice-Matched to GaAs S.Shirakata, M.Kondo, T.Nishino, Y.Hamakawa Japanese Journal of Applied Physics, Vol.25, No.3 (1986) pp.435-439. 5) Interface Stress at InGaPAs/GaAs Heterojunction S.Shirakata, Y.Fujiwara, M.Kondo, T.Nishino, Y.Hamakawa Extended Abstracts of the 17th Conference on Solid State Devices and Materials (1986) pp.205-208. 6) Characterization of Interface Stress at InGaPAs/GaAs by Cr-Related Luminescence Line in GaAs S.Shirakata, Y.Fujiwara, M.Kondo, T.Nishino, Y.Hamakawa Journal of Electronic Materials, Vol.15, No.6 (1986) pp.323-329. 7) Interface Stress at ZnSe/GaAs:Cr Heterostructure Y.Fujiwara, S.Shirakata, T.Nishino, Y.Hamakawa, S.Fujita Japanese Journal of Applied Physics, Vol.25, No.11 (1986) pp.1628-1632. 8) Influence of Immiscibility in Liquid-Phase Epitaxy Growth of InGaPAs on GaAs M.Kondo, S.Shirakata, T.Nishino, Y.Hamakawa Journal of Applied Physics, Vol.60, No.10 (1986) pp.3539-3545.
1987 9) 3d-Transition Metal Related Photoluminescence in In1-xGaxP Alloys S.Shirakata, T.Nishino, Y.Hamakawa, T.Kato, T.Ishida Japanese Journal of Applied Physics, Vol.26, No.2 (1987) pp.L127-L130.
1988 10) Photoluminescence Study on Local Atomic Arrangements in InGaP and GaAsP Alloys using Co Deep Impurity S.Shirakata, T.Nishino, Y.Hamakawa Journal of Applied Physics, Vol.63, No.2 (1988) pp.484-491. 11) Effect of Local Atomic Arrangement on Co-Related Luminescence inIII-V Alloy Semiconductors T.Nishino, S.Shirakata, Y.Hamakawa Journal of Luminescence, Vol.40 (1988) pp.15-16. 12) Polarized Near-Band Edge Photoluminescence in CuGaS2 Single Crystal S.Shirakata, K.Murakami, S.Isomura Japanese Journal of Applied Physics, Vol.27, No.9 (1988) pp.1780-1781. 13) Hydrostatic Pressure Dependence of Raman Spectra in CdSiP2 Crystal S.Shirakata Japanese Journal of Applied Physics, Vol.27, No.11 (1988) pp.2113-211.
1989 14) Observation of The Growth Process of CuInSe2 Thin Films S.Isomura, H.Hayashi, S.Shirakata Solar Energy Materials, Vol.18 (1989) pp.179-189 15) Electroreflectance Studies in CuGaS2 S.Shirakata, K.Murakami, S.Isomura Japanese Journal of Applied Physics, Vol.28, No.9 (1989) pp.1728-1729
16) Growth of CdSnP2 Single Crystals by Temperature Difference Method
S.Shirakata and S.Isomura
Journal of Crystal Growth, 99(1990)pp.781-784
17) Excitonic Photoluminescence in CuGaS2 Crystals
S.Shirakata, K. Saiki and S. Isomura
Journal of Applied Physics, 68, No.1(1990)pp.291-297
1991
18) Some Properties of CuInSe2 Films Prepared by Vacuum Evaporation of Elements
S. Isomura, S. Shirakata and T. Abe
Solar Energy Materials, 22(1991)pp.223-230
19) Electroreflectance and Photoluminescence in CuAlxGa1-xS2
S. Shirakata, K. Saiki and S. Isomura
Proceedings of 8th International Conference on Ternary & Multinary Compounds,
Kishinev, USSR, 1990, Vol.1 Shtiintsa Press(1991) pp.156-159
20) Photoluminescence in Yb-Doped I-III-VI2 Compounds
S. Shirakata, K. Isii and S. Isomura
Proceedings of 8th International Conference on Ternary & Multinary Compounds,
Kishinev, USSR, 1990, Vol.1, Shtiintsa Press(1991)pp.164-167
21）Photoluminescence Line at 2.29 eV in CuGaS2 Crystal
S. Shirakata and S. Isomura
Japanese Journal of Applied Physics, 30, No.8(1991)pp.1666-1667
22) Photoluminescence in CuGaS2 Crystals Grown by Iodine-Transport Method
T. Miyazaki, S. Shirakata and S. Isomura
Japanese Journal of Applied Physics, 30, No.11A(1991)pp.L1850-L1852
23) Photoreflectance Studies in CuGaS2 Single Crystals
S. Shirakata and S. Isomura
Journal of Applied Physics, 70, No.11(1991)pp.7051-7054
1992
24) Photoluminescence Studies in CuAlS2 Crystals
S. Shirakata, I. Aksenov, K. Sato and S. Isomura
Japanese Journal of Applied Physics, 31, No.8A (1992)pp.L1701-1704
1993
25) Photoluminescence Characterization of Defects in CuGaS2 Crystals
S. Shirakata, T. Miyazaki and S. Isomura
Materials Science Forum, 117-118(1993)pp.489-494
26）Photoreflectance Study of CuAlSe2 Heteroepitaxial Layers
S. Shirakata, S. Chichibu, S. Matsumoto and S. Isomura
Japanese Journal of Applied Physics, 32, No.2A (1993) pp.L167-169
27) 2.51 eV Photoluminescence from Zn-doped CuAlSe2 Epilayer Grown by Low-Pessure
Metalorganic Chemical Vapor Deposition
S. Chichibu, S. Matsumoto, S. Shirakata, S. Isomura and H. Higuchi
Applied Physics Letter. 62, No. 25 (1993)pp.3306-3308
28) CuAlSe2 Chalcopyrite Epitaxial Layers Grown by low-PressureMetalorganic Chemical
Vapor Deposition
S. Chichibu, S. Shirakata, A. Iwai, S. Matsumoto, H. Higuchi and S. Isomura
Journal of Crystal Growth, 131(1993)pp.551-559
29) Photoreflectance and Photoluminescence Studies of CuAlxGa1-xSe2 Alloys
S. Shirakata, S. Chichibu, R. Sudo, A. Ogawa, S. Matsumoto and S. Isomura
Japanese Journal of Applied Physics, 32, No.9B(1993)pp.L1304-1307
30) Excitonic Photoluminescence in a CuAlSe2 Chalcopyrite Semiconductor Grown by
Low-Pressure Metalorganic Chemical-Vapor Deposition
S. Chichibu, S. Matsumoto, S. Shirakata, S. Isomura and H. Higuchi
Journal of Applied Physics, 74, No.10 (1993)pp.6446-6447
31) Properties of CuInSe2 Thin Films Prepared by Chemical Spray Pyrolysis
T. Murakami, S. Shirakata and S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3(1993)pp.71-73
32) Preparation of CuInSe2 Films by Selenization of CuIn Precursors in Vacuum Chamber
A. Gupta, T. Ohno, T. Kariya, S. Shirakata and S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3(1993)pp.74-76
33) Preparation of SnO2/CuInSe2 Heterojunction
S. Shirakata, A. Yokoyama and S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3(1993)pp.77-79
34）Photoluminescence and Photoreflectance of CuGa(S1-xSex)2 and Cu(Ga1-xInx)S2 Alloys
S. Shirakata, Ogawa, S. Isomura, Kariya
Japanese Journal of Applied Physics, 32, Suppl. 32-3(1993) pp.94-96
35) Low-Pressure Metalorganic Chemical Vapor Deposition of CuAlSe2 Epitaxial Films
S. Chichibu, S. Shirakata, R. Sudo, M. Uchida, Y.Harada, S. Matsumoto, H. Higuchi
and S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3(1993)pp.139-141
36) Photoreflectance Characterization of CuAlSe2 Heteroepitaxial Layers Grown by
Metalorganic Chemical Vapor Deposition
S. Shirakata, S. Chichibu, S. Matsumoto and S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3 (1993)pp.494-496
37) 2.51 Donor Acceptor Pair Photoluminescence From Zn-Doped CuAlSe2 Epilayer Grown
by Low-Pressure Metalorganic Chemical Vapor Deposition
S. Chichibu, S. Shirakata, R. Sudo, M. Uchida, Y. Harada, S. Matsumoto, H. Higuchi
and S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3 (1993) pp.531-533
38) Local Structure of The Thin Film CuInSe2 Stuied by EXAFS
H. Kuwahara, H. Oyanagi, T. Yamaguchi, M. Aono, S. Shirakata, S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3 (1993) pp.570-572
39) Preparation and Characterization of Cu(Al,Ga)(S,Se)2 Penternary Alloys
A. Ogawa, R. Sudo, A. Gupta, S. Shirakata, S. Chichibu, S. Matsumoto and S. Isomura
Japanese Journal of Applied Physics, 32, Suppl. 32-3 (1993)pp.588-589
1994
40) Studies on CuIn Precursor for the Preparation of CuInSe2 Thin Films by
Selenization Technique
A. Gupta, S. Shirakata and S. Isomura
Solar Energy Materials and Solar Cells, 32 (1994)pp.137-149
41) Zn-Related Donor-Acceptor Pair Emissions in CuAlSe2 Epitaxial Layers
S. Shirakata, Chichibu, Matsumoto and S. Isomura
Japanese Journal of Applied Physics, 33, No.3A(1994)pp.L345-L347
42) Preparation of CuGaSe2 Heteroepitaxial Layers by Metalorganic Molecular Beam
Epitaxy
S. Shirakata, K. Morita, S. Isomura
Japanese Journal of Applied Physics, 33, No.5B (1994)pp.L739-L742
43) Growth of Cu(AlxGa1-x)SSe Penternary Alloy Crystals by Iodine Chemical Vapor
Transport
S. Chichibu, S. Shirakata, A. Ogawa, R. Sudo, M. Uchida, Y. Harada, T. Wakiyama, M.
Shishikura, S. Matsumoto and S. Isomura
Journal of Crystal Growth, 140(1994)pp.388-397
44) Heteroepitaxy and Characterization of CuGaSe2 Layer Grown by Low-Pressure
Metalorganic Chemical-Vapor Deposition
S. Chichibu, Y. Harada, M. Uchida, T. Wakiyama, S. Matsumoto, S. Shirakata,
S. Isomura and H. Higuchi
Journal of Applied Physics, .76, No.5 (1994) pp.3009-3015
45) Local Structure of CuInSe2 Thin Film Studied by Extended X-ray Absorption
Fime Structure,
Y.Kuwahara, H. Oyanagi, H. Yamaguchi, M. Aono, S.Shirakata and S. Isomura
Journal of Applied Physics, 76, No. 12(1994)pp.7864-7869.
1995
46) Ultraviolet Photoluminescence from CuAlS2 Heteroepitaxial layers grown by
Low-Pressure Metalorganic Chemical Vapor Deposition,
S.Chichibu, H.Nakanishi and S.Shirakata
Appllied Physics Letter 66, No.25(1995) pp.3513-3515.
47) Heteroepitaxial Growth of CuGaS2 Layers by Low-Pressure Metalorganic
Chemical Vapor Deposition
S.Chichibu, S.Shirakata, M.Uchida, Y.Harada, T.Wakiyama, S.Matsumoto,
H.Higuchi and S.Isomura:
Japanese Journal of Applied Physics 34 (1995) pp.3991-3997.
48) Cu-In-Se膜のEPMAによる定量分析
刈谷哲也、白方祥、磯村滋宏
Ｘ線分析の進歩 第26集1995年273-281.
49) Photoluminescence studies in CuAlSe2 epilayers grown by
low-pressure metalorganic chemical vapor deposition
S.Chichibu, S.Shirakata, S.Isomura, Y.Harada, M.Uchida, S.Matsumoto, and
H.Higuchi
Journal of Applied Physics 77 (1995)pp.1225-1232.
50) Preparation of c-axis oriented ZnO films by low-pressure organometallic chemical vapor deposition
K. Kobayashi, T. Matsubara, S. Matsushima, S. Shirakata, S. Isomura and G. Okada
Thin Solid Films 266 (1995) 106-109.
1996
51) Photoluminescence of CuGaS2 Heteroepitaxial Layers
S.Shirakata, S.Chichibu, and S.Isomura
Proc. 10th Int. Conf. Ternary & Multinary
Compounds, Stuttgart, Cryst.Res.& Technol. 31(1996)717-720 .
52) Preparation of CuInSe2 Thin Films by Chemical Spray Pyrolysis
S. Isomura, T. Kariya and S. Shirakata
Proc. 10th Int. Conf. Ternary & Multinary
Compounds, Stuttgart, Cryst.Res.& Technol.31(1996)523-526.
53)Low-Pressure Metalorganic Chemical Vapor Depiition of CuAlS2 Epilayers
S.Chichibu, S.Shirakata, K.Haga and H.Nakanishi
Proc. 10th Int. Conf. Ternary & Multinary
Compounds, Stuttgart, Cryst.Res.& Technol.31(1996) 281-284.
54) Photoreflectance of Cu-Based I-III-VI2 Heteroepitaxial Layers Grown by Metalorganic
Chemical Vapor Deposition
S.Shirakata and S.Chichibu
Journal of Applied Physics 79 (1996) 2043-2054
55) Preparation of c-Axis Oriented ZnO Films on (0112) Supphire Substrate
by Low-Pressure Organometallic Chemical Vapor Deposition
K. Kobayashi, T. Matsubara, S. Matsushima, S. Shirakata, S. Isomura, and G. Okada
Journal of Material Science Letters, Vol. 15, No. 5 (1996) 457-459.
56) Preparation of CuInSe2 Thin Films by Chemical Spray Pyrolysis
S. Shirakata, T. Murakami, T. Kariya and S. Isomura
Japanese Journal of Applied Physics. 35 (1996)191-199.
57) Preparation of SnO2 Thin Films by Plasma-Assisted Metaloraganic Chemical Vapor Deposition
S. Shirakata, A. Yokoyama and S. Isomura
Japanese Journal of Applied Physics, 35 (1996) L722-L724.
58) Molecular Beam Epitaxy of CuGaSe2 on GaAs Substrate Using Metalorganic Copper
and Gallium Precursors
S. Shirakata, K. Tamura and S. Isomura
Japanese Journal of Applied Physics, 35, no.5A (1996) L531-L534.
59）Preparation and harcterization of CuAlxGa1-xSe2 alloy layers grown by low-pressure metalorganic vapor phase epitaxy
S. Chichibu, H. Nakanishi, S.Shirakata, S. Isomura, Y. Harada, S. Matsumoto, H. Higuchi and T. Kariya
Journal of Applied Physics 80 (1996) 3338-3345
60) Visible and Ultraviolet Photoluminescence from Cu-III-VI2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
S. Chichibu, S.Shirakata, S. Isomura and H. Nakanishi
Extended Abstracts of the 1996 International Conference on
Solid State Devices and Materials (1996) pp.733-735.
1997
61) Visible and Ultraviolet Photoluminescence from Cu-III-VI2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
S. Chichibu, S.Shirakata, S. Isomura and H. Nakanishi
Jpn. J. Appl. Phys. 36 (1997) 1703-1714.
62) Calculation of electronic energy band structure of II-IV-V2 type chalcopyrite semiconductors by empirical pseudo-potential method
S. Shirakata and S. Isomura
Memoirs of Faculty of Engineering, Ehime University Vol. XVI (1997) 69-82
63) Application of semi-empirical tight-binding method to band calculation of chalcopyrite semiconductors
S. Shirakata, S. Matsushima, S. Isomura and M. Kohyama
Memoirs of Faculty of Engineering, Ehime University Vol. XVI (1997) 83-100
64) ガラス基板上のCdS薄膜の配向
刈谷哲也、白方祥、磯村滋宏
Ｘ線分析の進歩 第28集1997年225-238.
65) Improved quality of CuGaSe2 and CuAlSe2 epilayers grown on CuGa0.96In0.04Se substrates
S. Chichibu, H. Nalanishi, S. Shirakata, S. Isomura, H. Miyake and K. Sugiyama
Appl. Phys. Lett. 71 (1997) 533.
66) Electroreflectance of CuInSe2 Single Crystals
S. Shirakata, S. Chichibu, S. Isomura and H. Nakanishi
Jpn. J. Appl. Phys. 36 (1997) L543.
67) Crystal Growth and Optical Properties of CuAl(S,Se)2 Alloys
S. Shirakata, S. Chichibu and S. Isomura
Jpn. J. Appl. Phys. 36 (1997) 6645-6649.
68) Raman Spectra of CuInSe2 Thin Films Prepared by Chemical Spray Pyrolysis
S. Shirakata, H. Kubo, C. Hamaguchi and S. Isomura
Jpn. J. Appl. Phys. 36 (1997) L1394.
69) Room temperature photoreflectance of CuAlxGa1-xSe2 Alloys
S. Shirakata, S. Chichibu and S. Isomura
Jpn. J. Appl. Phys. 36 (1997) 7160-7161.
70) Photoluminescence of CuGaSe2 and CuAlSe2 MOVPE layers grown on CuGa0.96In0.04Se substrates
S. Shirakata, S. Chichibu, H. Miyake, S. Isomura, H. Nakanishi and K. Sugiyama
Proc. 11th Int. Conf. Ternary & Multinary Compounds (Salford, 1997) p.445-448.
71) Electroreflectance of CuInSe2, CuIn3Se5 and Cu2In4Se7
S. Shirakata, S. Chichibu, H. Miyake, S. Isomura, H. Nakanishi and K. Sugiyama
Proc. 11th Int. Conf. Ternary & Multinary Compounds (Salford, 1997)p.597-600.
72) Preparation of CuInGaSe2 thin films by chemical spray pyrolysis.
S. Isomura, S. Shirakata, Y. Kannaka, H. Hasegawa and T. Kariya
Proc. 11th Int. Conf. Ternary & Multinary Compounds (Salford, 1997) p.301-304.
73) Metalorganic Vapor Phase Epitaxy of Cu-III-VI2 Widegap chalcopyrite Semiconductors
S. Chichibu, S. Shirakata and H. Nakanishi
Proc. 11th Int. Conf. Ternary & Multinary Compounds (Salford, 1997) p.257-260.
1998
74) Yb-Related Photoluminescence in CuGaS2, AgGaSe2 and AgGaS2
S. Shirakata and S. Isomura
Jpn. J. Appl. Phys. 37 (1998) 776.
75) Metalorganic Molecular Beam Epitaxy of CuInSe2 on GaAs substrate
S. Shirakata, S. Yudate, T. Terasako and S. Isomura
Jpn. J. Appl. Phys. part 2. 37 (1998) L1033-L1035.
1999
76) Raman Scattering and Its Hydrostatic Pressure Dependence in ZnGeP2 Crystal
S. Shirakata
J. Appl Phys. 85 (1999) 3294-3300.
77) Decay Characteristics of Photoluminescence Line in CuGaS2 Crystals
T. Terasako, H. Umiji, K. Tanaka, S. Shirakata, H.Uchiki and S. Isomura
Jpn. J. Appl. Phys. 38 (1999) L805-L807.
78) Photoacuoustic Spectra of CuInSe2 Thin Films Prepared by Chemical Spray Pyrolysis
T. Terasako, S. Shriakata and S. Isomura
Jpn. J. Appl. Phys. 38 (1999) 4656-4660.
79) Cu(InGa)Se2薄膜のＥＰＭＡ分析
刈谷哲也、白方祥、磯村滋宏
Ｘ線分析の進歩 第30集 1999年 91-98.
80) Properties of Cu(InGa)Se2 Thin Films Prepared by Chemical Spray Pyrolysis.
S. Shirakata, S. Isomura, Y. Kannaka, H. Hasegawa and T. Kariya
Jpn. J. Appl. Phys. Vol. 38, No. 9A(1999) 4977-5002.
2000
81) Photoluminsecence of CuGaS2 Epitaxial Layer Grown by Metalorganic Vapor Phase Epitaxy
S. Shirakata, S. Chichibu and S. Isomura
J. Appl. Phys. Vol. 87, No. 8(2000) 3793-3799.
82) Optical Properties of CuGaSe2 and CuAlSe2 Layers Epitaxially Grown on CuGa0.96In0.04Se substrates.
S. Shirakata, S. Chichibu, H. Miyake and K. Sugiyama
J. Appl. Phys. Vol. 87, No. 10 (2000) 7294-7302.
83) Biexciton Luminescence from CuGaS2 Bulk Single Crystals
K. Tanaka, H. Uchiki, T. Terasako, S. Shirakata and S. Isomura
Solid State Commun. 114（2000）197-201.
84) Photoluminescence in Ho-Doped AgGaS2 Single Crystals
T. Terasako, K. Hashimoto, Y. Nomoto, S. Shirakata, S. Isomura, E. Niwa, K. Masumoto
Journal of Luminescence, Vol. 87-89 (2000) 1056-1058.
85) Optical Properties of GaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Under Various Growth Conditions\
S. Shirakata, H. Miyake, and K. Hiramatsu
Proc. Int. Workshop Nitride Semiconductors (IWN-2000)
IPAP Conference Series 1 (2000) pp.109.
2001
86) Preparation of CuAlSe2/CuGaSe2 Heterostructures by Molecular Beam Epitaxy
S. Shirakata, H. Watanabe, T. Terasako, and S.Isomura
Proc. 12 th Int. Conf. Ternary and Multinary Compounds
Jpn. J. Appl. Phys.39-1 (2001) 196.
87) Metalorganic Molecular Beam Epitaxy of CuAlSe2, CuGaSe2 and CuInSe2 on GaAs Substrate
S. Shirakata, T. Terasako, and S. Isomura
Proc. 12 th Int. Conf. Ternary and Multinary Compounds
Jpn. J. Appl. Phys. Suppl. 39-1 (2001) 198.
88) Sharp Photoluminescence Lines and Zeeman Effect in CuGaS2 Single Crystals
S. Shirakata, T. Terasako, and S. Isomura
Proc. 12 th Int. Conf. Ternary and Multinary Compounds
Jpn. J. Appl. Phys. Suppl. 39-1 (2001) 116.
89) Decay Properties of Phtoluminescence Lines in CuGaS2 Crystals
Terasako, H. Umiji, K. Tanaka, S. Shirakata, H. Uchiki and S. Isomura
Proc. 12 th Int. Conf. Ternary and Multinary Compounds
Jpn. J. Appl. Phys. Suppl. 39-1 (2001) 112.
90) Photoluminescence Properties of AgGaS2:Ho Single Crystals
T. Terasako, K. Hashimoto, S. Shirakata, S. Isomura, E. Niwa and K. Masumoto
Proc. 12 th Int. Conf. Ternary and Multinary Compounds
Jpn. J. Appl. Phys. Suppl. 39-1 (2001) 108.
91) Characterization of Cu-In-Se and CuIn(SxSe1-x)2 Thin Films Prepared by Chemical Spray Pyrolysis
T. Terasako, Y. Uno, S. Inoue, S. Shirakata, T. Kariya and S. Isomura
Proc. 12 th Int. Conf. Ternary and Multinary Compounds
Jpn. J. Appl. Phys. Suppl. 39-1 (2001) 187.
92) Observation of Biexciton Luminescence from CuGaS2 Bulk Single Crystals
T. Tanaka, H. Uchiki, S. Iida, T. Terasako, S. Shirakata, and S. Isomura
Proc. 12 th Int. Conf. Ternary and Multinary Compounds
Jpn. J. Appl. Phys. Suppl. 39-1 (2001) 110.
93) Annealing Effect of CuInS2 Single Crystals Grown by Traveling Heater Method
Kenji Yoshino, Masayuki Nishimoto, Sho Shirakata, Hideto Miyake, Kazumasa Hiramatsu, Minoru Yoneta and Tetsuo Ikari
Proc. 12 th Int. Conf. Ternary and Multinary Compounds, Jpn. J. Appl. Phys. Suppl. 39-1 (2001) 56.
94）Optical Properties of GaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Under Various Growth Conditions
Sho Shirakata, Hideto Miyake and Kazumasa Hiramatsu
Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 pp.109-112 (2001).
95）Sharp band edge photoluminescence of high-quality CuInS2 single crystals
Kenji Yoshino, Tetsuo Ikari, Sho Shirakata, Hideto Miyake and Kazumasa Hiramatsu
Applied Physics Letters, Vol. 78, No. 6 (2001) pp.742-744.
96）Photoluminescence and photoreflectance of GaInNAs single quantum well
Sho Shirakata, Masahiko Kondow and Takeshi Kitatani
Applied Physics Letters, Vol. 79, No. 1 (2001) pp. 54-56.
97) Metalorganic Vapor Phase Epitaxy
of Cu(Al,Ga,In)(S,Se)2 Chalcopyrite Semiconductors
Shigefusa F. Chichibu, Sho Shirakata and Hisayuki Nakanishi
Ternary and Multinary Compounds in the 21 st Century, IPAP
Books, The Institute of Pure and Applied Physics, Tokyo, 2001,
p. 85-90. (Invited)
98) Metalorganic Molecular Beam
Epitaxy of Cu-III-Se2 (III=Al, Ga, In) Semiconductors
Sho Shirakata and Shigehiro Isomura
Ternary and Multinary Compounds in the 21 st Century, IPAP
Books, The Institute of Pure and Applied Physics, Tokyo, 2001,
p. 91-97. (Invited)
99) Properties of Thin Films of
CuInSe2 and Related Compounds Prepared by Chemical Spray Pyrolysis
Shigehiro Isomura, Sho Shirakata, Tomoaki Terasako and Tetsuya
Kariya
Ternary and Multinary Compounds in the 21 st Century, IPAP
Books, The Institute of Pure and Applied Physics, Tokyo, 2001,
p. 137-144. (Invited)
100) Optical Properties and Characterizations
of Chalcopyrite Semiconductors
Sho Shirakata
Ternary and Multinary Compounds in the 21 st Century, IPAP
Books, The Institute of Pure and Applied Physics, Tokyo, 2001,
p. 204-215. (Invited)
101) Photoluminescence of CuGaS2
Single Crystals
Sho Shirakata, Tomoaki Terasako and Shigehiro Isomura
Ternary and Multinary Compounds in the 21 st Century, IPAP
Books, The Institute of Pure and Applied Physics, Tokyo, 2001,
p. 216-221. (Invited)
2002
102) Photoreflectance of CuAlxIn1-xSe2
Alloys
Sho Shirakata and Hideto Miyake
Jpn. J. Appl. Phys. Vol. 40 (2002) pp. 77-78.
103) Metalorganic Molecular Beam
Epitaxy of ZnO Using DEZn and H2O Precursors
Sho Shirakata, Keisuke Saeki and Tomoaki Terasako
J. Crystal Growth Vol. 237-239 (April, 2002) pp. 528-532.
104) Y.Takano, M.Masuda, K.Kobayashi,
K.Kuwahara, S.Fuke, and S.Shirakata
Epitaxial growth of InGaAs on misoriented GaAs(100) substrate
by metal-organic vapor phase epitaxy
J. Crystal Growth Vol. 236 (March, 2002) pp. 31-36.
105) Temperature-dependent of
photoluminescence of high-quality GaInNAs single quantum wells.
Sho Shirakata, Masahiko Kondow and Takeshi Kitatani
Appl Phys. Lett. Vol. 80, no. 12 (2002) pp. 2087-2089.
106) Low temperature growth of
InGaAs layers on misoriented GaAs substrates by metalorganic vapor
phase epitaxy
Yasuaki Takano, Masako Masuda, Kazu Kobayashi, Kazuhiro Kuwahara,
Shunro Fuke and Sho Shirakata
Appl Phys. Lett. Vol. 80, No. 12 (2002) pp. 2054-2056.
107) Excitation Intensity Dependence
of Photoluminescence Spectra in GaInNAs
Single Quantum wells
Sho Shirakata, Masahiko Kondow and Takeshi Kitatani
Jpn. J. Appl. Phys. Vol. 40, No.4A (2002) 2082-2083.
108)Photoluminescence of AgGaS2 and CuGaS2 Doped with Rare-Earth Impurities
Sho Shirakata and Tomoaki Terasako, Eiji Niwa, Katashi Masumoto
J. Phys. Chem. Solid, submitted.
109)Photoreflectance of CuInS2 Single Crystal Prepared by Traveling Heater Method
Sho Shirakata and Hideto Miyake
J. Phys. Chem. Solid, submitted.
110)Optical Properties of GaInNAs/GaAs Prepared by Molecular Beam Epitaxy
Sho Shirakata, Masahiko Kondow and Takeshi Kitatani
J. Phys. Chem. Solid, submitted.