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    • 吉田　明

    ４４１−８５８０　豊橋市天伯町雲雀丘１−１ 豊橋技術科学大学

    　電気電子工学系

    Ｔｅｌ　０５３２−４４−６７３８

    Ｆａｘ　０５３２−４４−６７５７

    E-mail yoshida@eee.tut.ac.jp

    1 )Thin films of CuInSe2 produced by rf sputtering with intentional oxygen doping,

    T.Yamaguchi, J.Matsufusa, H.Kabasawa, and A.Yoshida, J. Appl. Phys., 69(1991)7714-7719

    2 )Thermal crystallization of copper indium diselenide films in flowing or pressurized atmosphere,

    T.Yamaguchi, Y.Baba, M.Nishimura, J.Matsufusa, and A.Yoshida, phys. stat. sol. (a), 128(1991)455-463

    3 )Optical transition in rf sputtered CuInXGa1-XSe2 thin films,

    T.Yamaguchi, J.Matsufusa, and A.Yoshida, Jpn. J. Appl. Phys., 31(1992)L703-L705

    4 )Thin films of CuInSe2 prepared by sputtering from various compositional powder targets,

    T.Yamaguchi, J.Matsufusa, and A.Yoshida, Sol. Energy. Mat. Cells, 27(1992)25-35

    5 )Thermal crystallization of copper indium diselenide film with oxygen-doped layer,

    T.Yamaguchi, J.Matsufusa, and A.Yoshida, Jpn. J. Appl. Phys., 31(1992)2877-2882

    6 )Structural properties of CuInXGa1-XSe2 thin films prepared by rf sputtering,

    T.Yamagushi, J.Matsufusa, and A.Yoshida, J. Appl. Phys., 72(1992)5657-5662

    7 )Optical properties in rf sputtered CuInXGa1-XSe2 thin films,

    T.Yamaguchi, J.Matsufusa, and A.Yoshida, Appl. Surf. Sci., 70/71(1993)669-674

    8 )Preparation and characterizations of CuInXGa1-XSe2 thin films crystallized by annealing,

    T.Yamaguchi, M.Suzuki, and A.Yoshida,

    Jpn. J. Appl. Phys., 32(1993)Suppl.32-3, pp.62-64

    9 )Preparation of CuInXGa1-XSe2 thin films on Si substrates,

    T.Yamamoto, T.Yamaguchi, M.Suzuki, Y.Demizu, and A.Yoshida, First World Conf. Photovol. Energy Conv., 1994, Hawaii, pp.168-171

    10)Preparation of ordered vacancy chalcopyrite thin films by rf sputtering from CuInSe2 target with Na2Se,

    T.Tanaka, Y.Demizu, T.Yamaguchi, and A.Yoshida, Jpn. J. Appl. Phys. 35(1996)2779-2781

    11)Characterization of CuInSe2 thin films prepared by excimer laser ablation,

    Y.Yamamoto, T.Yamaguchi, Y.Demizu, T.Tanaka, A.Ganjoo, and A.Yoshida, Cryst. Res. Technol., 31(1996)473-476

    12)Influence of precursor structure on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization,

    T.Yamaguchi, M.Suzuki, Y.Yamamoto, Y.Demizu, T.Tanaka, and A.Yoshida, Cryst. Res. Technol. 31(1996)481-484

    13)(Cd,Zn)S thin films prepared by chemical bath deposition for photovoltaic devices,

    T.Yamaguchi, Y.Yamamoto, T.Tanaka, Y.Demizu, and A.Yoshida, Thin Solid Films, 281-282(1996)375-378

    14)Fabrication and characterization of CuIn(SXSe1-X)2 thin films deposited by r.f.sputtering,

    Y.Yamamoto, T.Yamaguchi, Y.Demizu, T.Tanaka, and A.Yoshida, Thin Solid Films, 281-282(1996)372-374

    15)Large grain growth in Cu(In,Ga)Se2 thin film with band gap of around 1.4eV by thermal crystallization in saturated Se vapors,

    T.Yamaguchi, Y.Yamamoto, T.Tanaka, Y.Demizu, and A.Yoshida, Jpn. J. Appl. Phys., 35(1996)L1618-L1621

    16)Characterization of CuInS2 thin films prepared by sputtering from binary compounds,

    Y.Yamamoto, T.Yamaguchi, T.Tanaka, N.Tanahashi and A.Yoshida, Sol. Mat. Sol. Cells, 49(1997)399-405

    17) Preparation of Cu(In,Ga)2Se3.5 thin films by rf sputtering from stoichiometric Cu (In,Ga)Se2 target with Na2Se,

    T.Tanaka,Y.Demizu,T.Yamaguchi and A.Yoshida, J. Appl. Phys., 81(1997)7619-7622

    18)Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor,

    T.Yamaguchi, Y.Yamamoto, T.Tanaka, N.Tanahashi, and A.Yoshida, Sol. Energy Mat. Sol. Cells, 50(1998)1-6

    19)Characterization of Cu(In,Ga)2Se3.5 thin films prepared by rf sputtering,

    T.Tanaka,N.Tanahashi,Y.Yamamoto,T,Yamaguchi and A.Yoshida, Sol. Energy Mat. Sol. Cells, 50(1998)13-18

    20)Preparation of CuInSe2 thin films with large grain by excimer laser ablation, A.Yoshida,N.Tanahashi,T.Tanaka,Y.Demizu,Y.Yamamoto andT.Yamaguchi,

    Sol. Energy Mat. Sol. Cells, 50(1998)7-12