松下裕亮

東海大学開発工学部

Tel. +81-559-68-1211 ex.4513 (DID) Fax +81-559-68-1155

E-mail: matusita@wing.ncc.u-tokai.ac.jp

1) Electrical and Optical Properties of the CuGa(S1-xSex)2 System,

Saburo Endo, Hisayuki Nakanishi, Shigetaka Nomura and Taizo Irie,

Japanese Journal of Applied Physics, 29(3) (1990) 484-488.

2) Study on the Crystal Structure of CdInGaS4 and Cd3InGaS6

by Computer Simulation Method, Hiroaki Matsushita, Shigetaka Nomura,

Shizutoshi Ando, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics, 29(6) (1990) L872-L874.

3) Crystal Growth and Characterization of CdInGaS4 and Related Compounds,

Saburo Endo, Shizutoshi Ando, Hiroaki Matsushita, Shigetaka Nomura, Taizo

Irie, Hisayuki Nakanishi, Yasutoshi Noda, Takeo Takizawa and Taro Toyada,

Journal of Crystal Growth, 99 (1990) 776-780.

4) Thermodynamical Properties of I-III-VI2 Group Chalcopyrite Semiconductors,

Hiroaki Matsushita, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics, 30(6) (1991) 1181-1185.

5) Structural Analysis of the Formation of CuInSe2,

Shigetaka Nomura, Hiroaki Matsushita and Takeo Takizawa,

Japanese Journal of Applied Physics, 30(12A) (1991) 3461-3464.

6) Raman-Scattering Properties of I-III-VI2 Group Chalcopyrite Semiconductors,

Hiroaki Matsushita, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics, 31(1) (1992) 18-22.

7) Effects of Oxygen Doping on Bulk Properties of CuInSe2 Crystals,

Hiroaki Matsushita, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics, 31(9A) (1992) 2687-2688.

8) Crystal Growth of CuInSe2 by the Method of Horizontal Bridgman

with Two Temperature Zones,

Hiroaki Matsushita, Hisayuki Nakanishi, Saburo Endo and Taizo Irie,

Journal of Crystal Growth, 128 (1993) 655-658.

9) Structural and Optical Properties of the Cu1-xAgxGaS2 System,

Hiroaki Matsushita, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics, 32(8A) (1993) L1049-L1050.

10) Crystal Growth of CuInSe2 by the Method of Horizontal Bridgman

with Three Temperature Zones,

Hiroaki Matsushita, Tatsuhiko Suzuki, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics, 32, Suppl.32-3 (1993) 99-100.

11) Electrical and Optical Properties of CuInSe2 Single Crystals Prepared

by Three-Temperature-Horizontal Bridgman Method,

Hiroaki Matsushita, Tatsuhiko Suzuki, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics 34(7A) (1995) 3774-3477.

12) Thermal Analysis of Chemical Reaction Process Forming CuInSe2 Crystal,

Hiroaki Matsushita and Takeo Takizawa,

Japanese Journal of Applied Physics 34(9A) (1995) 4699-4705.

13) Electrical, Optical and Schottky Properties of AgGa(S1-xSex)2 System,

Hiroaki Matsushita, Osamu Shiono, Saburo Endo and Taizo Irie,

Japanese Journal of Applied Physics 34(10) (1995) 5546-5549.

14) Single Crystal Growth of CuInSe2 by Selenization Horizontal Bridgman

Method, Hiroaki Matsushita and Takeo Takizawa,

Journal of Crystal Growth 160 (1996) 71-77.

15) Single Crystal Growth of CuInSe2 by Selenization Horizontal Bridgman

Method with Seed,

Hiroaki Matsushita, Akira Iwabuchi, Takeo Takizawa and Saburo Endo,

Crystal Research and Technology 31(S) (1996) 77-80.

16) Percolative Phenomena in CdIn2S4,

Chiharu Komatsu, Hiroaki Matsushita, Alfred Goltzen'e and Claude Schwab,

Crystal Research and Technology 31(S) (1996) 173-176.

17) Evaluation of the u-parameter of CuInSe2 using the Simulation

of the X--ray Diffraction,

Shigetaka Nomura, Hiroaki Matsushita and Saburo Endo,

Crystal Research and Technology 31(S) (1996) 813-816.

18) Electron Spin Resonance Study of CuInSe2 Crystals Prepared

by Horizontal Bridgman Method, Hiroaki Matsushita, Takeo Takizawa,

Shigetaka Nomura, Alfred Goltzene and Claude Schwab,

Crystal Research and Technology 31(S) (1996) 903-906.

19) Thermal Analysis of Chemical Reaction Forming the CuGaSe2 Single Phase,

Hiroaki Matsushita, Hiroyuki Jitsukawa and Takeo Takizawa,

Japanese Journal of Applied Physics 35(7) (1996) 3830-3835.

20) Thermal Analysis of Chemical Reaction Process for CuGa1-xInxSe2 Crystals,

Hiroaki Matsushita, Hiroyuki Jitsukawa and Takeo Takizawa,

Journal of Crystal Growth 166 (1996) 712-717.

21) Se vapor pressure dependence of the solidifying points

of I--III--VI2 semiconductors (I = Cu, Ag; III = Ga, In),

Hiroaki Matsushita, Hiroyuki Jitsukawa and Takeo Takizawa,

Transactions of the Materials Research Society of Japan 20 (1996) 715-718.

22) Phase diagram of the CuIn--2Se system for CuInSe2 crystal growth

by controlling Se contents, Hiroaki Matsushita and Takeo Takizawa,

Journal of Crystal Growth 179 (1997) 503-509.