中西久幸
〒278 野田市山崎2641東京理科大学電気工学科
tel.:0471-24-1501 ext.3713
fax :0471-25-8651
hisayuki@rs.noda.sut.ac.jp
(1) Anomalous Temperature Dependence of the Electrical Resistivity of CuGa(S1-x Sex )2 System
S.Endo,Matsushita,H.Nakanishi,T.Irie and Nomura
Proc.Int.Conf.Ternary andMultinary Compounds,ICTMC-8, Shtiintsa Press, Kishinev 1
(1990)P125-P128.
(2) Photoluminescence and Raman Spectra of CuInSe2 Single Crystals
H.Nakanishi,T.Maeda,S.Ando,S.Endo,T.Irie,H.Tanino and T.Yao
Proc.Int.Conf.Tanary and Multinary Compounds,ICTMC-8,Shtiintsa Press,Kishinev 1 (1990)P152-P155.
(3) Optical Properties of Layered Semiconductor CdInGaS4 and Related Phenomena
T.Irie,S.Endo and H.Nakanishi
Proc.Int.Conf.Tanary and Multinary Compounds, ICTMC-8,Shtiintsa Press,Kishinev 1
(1990) P33-P40.
(4) The Dependence of Optical Absorption in CdInGaS4 on Temperature and
Hydrostatic Pressure
T.Toyoda,H.Nakanishi,S.Endo and T.Irie
Proc.Int.Conf. Tanary and Multinary Compounds,ICTMC-8,Shtiintsa Press,Kishinev 1
(1990) P401-P404.
(5) The Refractive Indices and the Optical Dispersion Parameters in CdInGaS4
T.Toyoda,H.Nakanishi,S.Endo and T.Irie
Proc.Int.Conf. Tanary and Multinary Compounds,ICTMC-8,Shtiintsa Press,Kishinev 1
(1990) P429-P432.
(6) Electrical and Optical Properties of the CuGa(S 1-x Sex )2 System
H.Matushita,S.Endo,H.Nakanishi,S.Nomura and T.Irie
Jpn.J.Appl.Phys.29 (1990)P484-P488.
(7) X-ray Absorption Near Edge Structure (XANES) of CuInSe2 ,Brass and Phosphor Bronze
by Photoacoustic Method
T.Toyoda, T.Masujima, H.Shiwaku, A.Iida, H.Kawata, M.Ando, H.Nakanishi, S.Endo and T.Irie
Proc.10th Sym.Ultrasonic Electronics,Tokyo,1989,Jpn.J.Appl.Phys.29(1990)P255-P257.
(8) X-ray Photoacoustic Absorption Spectra of CuInSe2
T.Toyoda,T.Masujima,H.Shiwaku,H.Nakanishi,S.Endo,T.Irie,I.Shiozaki,A.Iida,H.Kawata and M.Ando
J.Cryst.Growth 99(1990)P762-P765.
(9) Crystal Growth and Characterization of CdInGaS4 and Related Compounds
S.Endo,S.Ando,H.Matsushita,S.Nomura,T.Irie,H.Nakanishi,Y.Noda,T.Takizawa,and T.Toyoda
J.Cryst.Growth 99(1990)P776-P780.
(10) The Dependence of Optical Absorption in Bi12SiO 20 on Temperature and Hydrostatic Pressure
T.Toyoda,H.Nakanishi,S.Endo and T.Irie
J.Cryst.Growth 99(1990)P885-P890.
(11) Photoacoustic X-ray Absorption Near Edge Structure in CuInSe2
T.Toyoda,T.Masujima,H.Shiwaku,H.Nakanishi,S.Endo,T.Irie,A.Iida,H.Kawata and M.Ando
Photoacoustic and Photothermal Phenomena(II), Springer-Verlag Berlin, (1990)P235-P237.
(12) Green Emission in CdS/CdInGaS4
S.Ando,S.Endo H.Nakanishi and T.Irie
Jpn.J.Appl.Phys. 30 (1991)p2540-p2541
(13) Raman Spectra of CuInSe2
H.Tanino,T.Maeda,H.Fujikake,H.Nakanishi,S.Endo,and T.Irie
Phys.Rev. B45 (1992)P13323-P13330.
(14) Edge Emission Enhancement in CdS by Laminated CdInGaS4
S.Ando,T.Okada,S.Endo,T.Irie,T.Miya and H.Nakanishi
J.Cryst.Growth 117 (1992)P362-P365.
(15) Study on the Crystallographic and Photoluminescent Properties of Cd3InGaS6 (II)Photoluminescence
S.Ando,S.Endo H.Nakanishi and T.Irie
Jpn.J.Appl.Phys. 31 (1992)p2803-p2810
(16) Electrical and Optical Properties of CuInSe2 Single Crystals with Various Deviations from Stoichiometry
H.Nakanishi,T.Sawaya,S.Endo and T.Irie
Proc.9th Int.Conf.Ternary and Multinary Compounds, Yokohama, 1993 Jpn. J. Appl. Phys. Vol.32 (1993)Suppl.32-3,pp200-202
(17) Green Emission in CdS Films Deposited on CdInGaS4 by Evaporation Method
S.Ando,S.Endo,H.Nakanishi,T.Toyoda and T.Irie
Proc.9th Int.Conf.Ternary and Multinary Compounds,Yokohama,1993 Jpn. J. Appl. Phys. Vol.32 (1993)Suppl.32-3, pp624-627.
(18) Optical Properties of Zｎx Cd1-x In GaS4 System
S.Ando,S.Endo,H.Nakanishi,T.Toyoda and T.Irie
Proc.9th Int.Conf.Ternary and Multinary Compounds,Yokohama,1993 Jpn.J.Appl.Phys. Vol.32 (1993)Suppl.32-3, pp501-502.
(19) Raman Spectra of CuGax In1-x Se2
H.Tanino,H.Deai and H.Nakanishi
Proc.9th Int.Conf.Ternary and Multinary Compounds,Yokohama,1993 Jpn.J.Appl.Phys. Vol.32 (1993) Suppl.32-3,pp436-438.
(20) Photothermal Effect in Compound Semiconductors CdInGaS4 and CdIn2 S4
T.Toyoda,M.Sorazawa,H.Nakanishi,S.Endo,T.Irie and T.Shigenari
Proc.9th Int. Conf.Ternary andMultinary Compounds,Yokohama,1993 Jpn.J.Appl.Phys. Vol.32(1993) Suppl.32-3,pp497-500.
(21) EXAFS Studies on (Cu,In)Se2
H.Yamaguchi,Y.Kuwahara.H.Oyanagi,H.Nakanishi and T.Irie
Proc.9th Int.Conf. Ternary andMultinary Compounds,Yokohama,1993 Jpn.J.Appl.Phys.
Vol.32(1993) Suppl.32-3,pp567-569.
(22) Creation of a new In-based Material by Laser Irradiation of Chalcopyrite-type Ternary
Semiconductors
H.Tanino,H.Fujikake, and H.Nakanishi
J.Appl.Phys. 74(1993)P3821-P3823.
(23) Determination of the Crystal Orientaion of CuInSe2 by Raman Spectroscopy
H.Tanino,H.Fujikake,T.Maeda and H.Nakanishi
J.Appl.Phys.74(1993)P2114-P2116.
(24) Crystal Growth of CuInSe2 by the Method of Horizontal Bridgman with two Temperature
Zones
H.Matsushita,S.Endo,T.Irie and H.Nakanishi
J.Cryst.Growth 128 (1993) P655-P658.
(25) Hydrostatic Pressure Dependence of the Fundamental Absorption Edges of CdInGaS4 and ZnIn 2 S4
T.Toyoda,M.Sorazawa,H.Nakanishi,S.Endo and T.Irie:Proc.Int.Conf.High Pressure in Semiconductor Physics, Kyoto,1992,Jpn.J.Appl.Phys. 32(1993)Suppl.32-1, P291-P293.
(26) Characterization and Control of the defects in I−III−VI2 Group Semiconductors and Related Compounds
T.Irie,S.Endo and H.Nakanishi
New Functionality Materials, A (1993)P115-P120.
(27) Photoluminescence Properties of CuInSe2 Grown by Molecular Beam Epitaxy
S.Niki,Y.Makita,A.Yamada,A.Obara,O.Igarshi,S.Misawa,M.Kawai,H.Nakanishi, Y.Taguchi, N.Kutsuwada
Solar Enerugy Materials and Solar Cells 35(1994)141-147
(28)Heteroepitaxy and Characterization of CuInSe2 on GaAs(001)
S.Niki,Y.Makita,A.Yamada,O.Hellman,P.J.Fons,A.Obara,Y.Okada,R.Shioda, T.Kurafuji,
S.Chichibu, H.Nakanishi
J.Cryst.Growth 150(1995)P1201-P1205.