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  • =1B$B;085B?855!G=3D@-:`NA8= &5f2q$N%[!<%`%Z!<%8$KLa$k=1B(B
    •

    =1B$BBGLZ5WM:=1B(B

    =1B$B")=1B(B940=1B$B0l=1B(B2188 =1B$BD92,;T=1B(B = =1B$B>eIY2,D.=1B(B1603=1B$B!]=1B(B1 =1B$BD92,5;=3DQ2J3XBg3X=1B(B = =1B$B9)3XIt=1B(B =1B$BEE5$7O=1B(B

    TEL 0258-47-9527

    FAX 0258-47-9500

    (uchiki@nagaokaut.ac.jp)

    =1B$BO@J8=1B(B


    1."Preparation of AgGaS2 Thin Films by Excimer Laser Ablation Technique", (Conference Paper)

    O. Machida, A. Tanaka, and H. = Uchiki,

    Proceedings of Laser Advanced Materials Processing, 1992, Nagaoka (June, 1992), p.1111-1115.


    2."Photoluminescence studies of p- and n-type ZnS layers grown by vapor phase epitaxy", (Conference Paper)

    H. Kinto, M. Yagi, K. Tanigashira, T. Yamada, H. Uchiki and S. Iida,

    Journal of Crystal Growth 117, 348-352 (1992).


    3."Preparation of AgGaS2 Thin Films by Excimer Laser Deposition", (Conference Paper)

    Hisao Uchiki, Hiroyuki Hirasawa and Osamu Machida,

    Jpn. J. Appl. Phys. Vol.32, Suppl.32-3, 1993, p. 529-530.


    4."Resonant Raman Scattering and Excitonic Polariton States in = CuGaS2", (Conference Paper)

    Nozomu Tsuboi, Hisao Uchiki, = Hideyuki Ishikawa and Seishi Iida,

    Jpn. J. Appl. Phys. Vol.32, Suppl.32-3, 1993, p. 584-585.


    5."Resonant Raman scattering and free exciton emission in = CuGaS2 crystals", (Conference Paper)

    N. Tsuboi, H. Uchiki, M. Sawada, H. Kinto, M. Yagi, S. Iida, M. Morohashi and S. Okamoto,

    Physica B 185, 348-351 (1993).


    6."Preparation of AgGaS2 Films by Excimer Laser = Deposition",

    Hisao UCHIKI, Osamu MACHIDA, Akio = TANAKA and Hiroyuki HIRASAWA,

    Jpn.J.Appl.Phys. 32(6A), L764-L766 (1993).


    7."Exciton and Raman Processes in ZnS under Picosecond Light = Pulse Excitations", (Conference Paper)

    H. Uchiki, H. Kinto, T. Moriyama, = N. Tuboi, J. Wang and S. Iida,

    Journal of Crystal Growth 138, 873-876 (1994).


    8."Epitaxial Growth of AgGaS2 on (100)GaAs by Excimer Laser Deposition",

    Hisao Uchiki, Hiroyuki Hirasawa and Isao Hasegawa,

    Jpn. J. Appl. Phys. 33 (7B), L983-L985 (1994).


    9.=1B$B!I#Z#n#S%(%T%?%-%7%c%kKl$NNe5/;R$H6&LD%i%^%s8z2L!I=1B(B,=1B$B6bF#?N!"=1B(B=1B$BBGLZ5WM:=1B(B=1B$B!"GHB?E/!"?9;36/!"HSED@?G= 7!"3yEDFXG7=1B(B

    Trans. IEE of Japan=1B$B!JEE5$3X2qO@J8;o#C!K=1B(B, = 114-C(12),1262-1266 (1994).


    10."Exciton States in Layered III-III-VI(2) Compounds with = Incommensurate Phase", (Conference Paper)

    N. Mamedov, T. Ogasawara, M. Morohashi, H. Uchiki and S. Iida,

    Cryst. Res. & Technolo. 31(Spec. Issue), 721-724 (1996).


    11."Amphoteric Zn Impurities in CuGaS2 Epitaxial = Layers Grown by Vapor Phase Epitaxy", (Conference Paper)

    T. Terasako, N. Tsuboi, H. Uchiki = and S. Iida,

    Cryst. Res. & Technolo. 31(Spec. Issue), 753-756 (1996).


    12."Raman Scattering and Two-Phonon Infrared Absorption Spectra of CuAlxGa1-xS2 Alloy Crystals", = (Conference Paper)

    T. Terasako, N. Tsuboi, H. Uchiki = and S. Iida,

    Cryst. Res. & Technolo. 31(Spec. Issue), 927-930 (1996).


    13."Growth and characterization of twin-free ZnSe single crystals by the vertical Bridgeman Method", (Conference Paper)

    T. Fukuda, K. Umetsu, P. Rudolph, H. J. Koh, S. Iida, H. Uchiki and N. Tsuboi,

    J. Cryst. Growth 161, 45-50 (1996).


    14."Raman Scattering and Two-Phonon Infrared Transmission Spectra of Cu(AlxGa1-x)S2 Crystals",

    T. Terasako, N. Tsuboi, H. Uchiki = and S. Iida,

    Jpn. J. Appl. Phys. 36, 997-1005 (1997).


    15."Preparation of CuGaS2/ZnS Structures on GaAs(100) Substrate by Pulsed Excimer-Laser Deposition",

    H. Uchiki and M. Yamaguchi,

    Jpn. J. Appl. Phys. 36(7A), L868-L870 (1997).


    16."Ultrafast Photoconductive Switches with a Gap of 43nm = Fabricated Using an Atomic Force Microscope", (Conference Paper)

    Taro Itatani, Tadashi Nakagawa, Kazuhiko Matsumoto, Yuichi Kotaki, Hisao Uchiki, M. Nuss and J. Boweres,

    J. OSA Trends in Optics and Photonics Vol.13. Ultrafast = Electronics and Optoelectronics. Opt. Soc. America, Washington, DC, USA. Pp. 95-96, 1997.


    17."Ultrafast Photoconductive Switches with a 43nm Gap Fabricated Using an Atomic Force Microscope", (Conference Paper)

    Taro Itatani, Yuichi Kotaki, Tadashi Nakagawa, Kazuhiko Matsumoto, Yoshinobu Sugiyama and Hisao Uchiki,

    Jpn. J. Appl. Phys. 36, 1900-1902 (1997).


    18."Photovoltaic Effect in TlInS2-, = TlGaSe2- and TlGaS2-based Barrier Structures", (Conference Paper)

    Yu. Rud, V. Rud, S. Iida, M. Morohashi-Yamazaki, H. Uchiki, and N. Mamedov,

    Inst. Phys. Conf. Ser. No 152, p. 967-970 (1998).


    19."Near Band Edge Optical Properties of the TlInS2 = and TlGaS2 Incommensurate Ferroelectrics", (Conference Paper)

    N. Mamedov, S. Iida, T. Matsumoto, H. = Uchiki, and Yo. Tanaka,

    Inst. Phys. Conf. Ser. No 152, p. 899-902 (1998).


    20."Vapor Phase Epitaxy of CuGaS2 Using CuCl, = Diethylgalliumchloride and H2S Sources under Simultaneous and Alternate Feeding = Conditions", (Conference Paper)

    J. Mitomo, H. Sato, T. Terasako, T. Matsumoto, H. Uchiki and S. Iida,

    Inst. Phys. Conf. Ser. No 152, p. 337-340 (1998).


    21."Picosecond Time-Resolved Spectroscopy of Exciton Systems in CuGaS2 Bulk Single Crystals",

    Kunihiko Tanaka, Hisao Uchiki and = Seishi Iida,

    Jpn. J. Appl. Phys. 38(3A), 1329-1333 (1999).


    22."Decay Characteristics of Photoluminescence Lines in = CuGaS2 Crystals",

    Tomoaki Terasako, Hiroshi Umiji, Kunihiko Tanaka, Sho Shirakata, Hisao Uchiki and Shigehiro Isomura,

    Jpn. J. Appl. Phys. 38(7B), L805-L807 (1999).


    23."Light induced memory in TlInS2 incommensurate = ferroelectric", (Conference Paper)

    H. Uchiki, D. Kanazawa, N. Mamedov, S. Iida

    J. Luminescence (to be published).

    =1B$BFC=3D8=1B(B

    1. "=1B$B%"%b%k%U%!%9#C!'#HKl$N8wM65/8z2L=1B(B",

    =1B$BBGLZ5WM:=1B(B=1B$B!"HSED@?G7=1B(B,

    =1B$B8GBNJ*M}=1B(B<=1B$BEE;RNe5/$K$h$kHsJ?9U8GBN%@%$%J%_%C%/%9=1B= (B>=1B$BFC=3D89f=1B(B p.79-86 (1993).