栗山一男
〒184小金井市梶野町3一7一2法政大学工学部
tel.:0423-87-6185
fax :0423-87-6122
( kuri@ionbeam.hosei.ac.jp)
1. K. Kuriyama and K. Kushida, Optical band gap of the filled
tetrahedral
semiconductor LiMgAs, J.Appl.Phys. (03/15/2000 issue).
2. K. Kuriyama and K. Kushida, Band edge and phonon-assisted
deep level emissions
in the filled tetrahedral semiconductor LiMgP, J.Appl.Phys. (02/15/2000
issue).
3. K. Kuriyama and K. Kushida, Raman scattering from the ordered
filled tetrahedral
semiconductor LiMgP, Solid State Commun. 112, pp.429-432 (1999).
4. K. Kuriyama, R. Taguchi, K. Kushida, and K. Ushiyama, Growth
and band gap of
the filled tetrahedral semiconductor LiZnN, J. Cryst. Growth.
198/199, pp.802-805
(1999).
5. K. Kuriyama, K. Kushida, and R. Taguchi, Optical band gap
of the ordered filled
tetrahedral semiconductor LiMgP, Solid State Commun. 108, pp.429-432
(1998)
6. K. Kuriyama, Takashi Kato, Tomoharu Kato, and H. Matsuno,
Growth and
photoluminescence properties of the filled tetrahedral semiconductor
LiZnAs, J. Cryst.
Growth. 166, pp.631-635 (1996).
7. K. Kuriyama, Tomoharu Kato, and K. Kawada, Optical band gap
of the filled
tetrahedral semiconductor LiZnAs, Phys. Rev. B49, pp.11452-11455
(1994).
8. K. Kuriyama and Tomoharu Kato, Optical band gap and photoluminescence
studies
in blue-band region of Zn-doped LiInS2 single crystals, Solid
State Commun. 89,
pp.959-962 (1994).
9. K. Kuriyama, Tomoharu Kato, and T. Tanaka, Optical band gap
of the filled
tetrahedral semiconductor LiZnN, Phys. Rev. B49, pp.4511-4513
(1994).
10. K. Kuriyama and Tomoharu Kato, Blue-band emission of LiInS2
single crystals
grown by the indium solution method, Proc. 9th Int. Conf. Ternary
and Multinary,
Yokohama, 1993, Jpn. J. Appl. Phys.32, Suppl.32-3, pp.615-617
(1993).
11. K. Kuriyama, Tomoharu Kato, and A. Takahashi, Optical band
gap and blue-band
emission of a LiInS2 single crystal, Phys. Rev. B46, pp.15518-15519
(1992).
12. K. Kuriyama, Yukimi Takahashi, and K. Tomizawa, Raman scattering
from the
filled tetrahedral semiconductor, Phys. Rev. B47, pp.13861-13863
(1993).
13. K. Kuriyama, Yukimi Takahashi, and Tomoharu Kato, Preparation
and
characterization of the filled tetrahedral semiconductor LiZnP
film on InP(111), J. Cryst.
Growth. 128, pp.1125-1129 (1993).
14. K. Kuriyama, N. Mineo, and Yukimi Takahashi, Preparation
and characterization
of the filled tetrahedral semiconductor LiZnP film on GaP(111),
J. Cryst. Growth. 113,
pp.333-335 (1991).
15. K. Kuriyama, N. Mineo, and Yukimi Takahashi, Photoluminescence
study of
native defects in the filled tetrahedral semiconductor LiZnP,
J. Appl. Phys. 69, pp.7812-
7814 (1991).
16. K. Kuriyama, T. Kato, and N. Mineo, Crystal growth and characterization
of the
filled tetrahedral semiconductor LiZnP, J. Cryst. Growth. 108,
pp.37-40 (1991).
17. K. Kuriyama, T. Kato, and S. Tsuji, Preparation and characterization
of the filled
tetrahedral semiconductor LiZnP film on quartz, J. Appl. Phys.
66, pp.3945-3947
(1989).
18. K. Kuriyama and T. Kato, Optical band gap of the filled tetrahedral
semiconductor
LiZnP, Phys. Rev. B37, pp.7140-7142 (1988).
19. K. Kuriyama and F. Nakamura, Electrical transport properties
and crystal structure
of LiZnAs, Phys. Rev. B36, pp.4439-4441 (1987).
20. K. Kuriyama, Y. Igarashi, F. Nakamura, and A. Okada, Epitaxial
growth of
LiInSe2 on {111}A oriented GaP by a hot wall technique, Appl.
Phys. Lett. 48, pp.1199-
1201 (1986).