増本　剛

〒982-0807 仙台市太白区八木山南２−１−１ 財団法人 電気磁気材料研究所
tel. : 022-245-8027
fax :022-245-8031

1. Mg2Si0.6Ge0.4の熱電的性質

今　裕之，野田泰稔，古川吉孝，西田勲夫，増本　剛

日本金属学会誌，55(1991)893.

2. Mg2Si0.6Ge0.4における熱電的性質の温度依存性

今　裕之，野田泰稔，古川吉孝，西田勲夫，増本　剛

日本金属学会誌，55(1991)1018.

3. Growth of AgGaS2 Single Crystals by Chemical Transport with Halogen

Y.Noda, T.Kurasawa, Y.Furukawa and K.Masumoto

J.Cryst.Growth,115(1991)802.

4. Hetero-Epitaxial Growth of Pb1-XCdXS1-YSeY Thin Film by the Hot-Wall Method

K.Mochizuki, Y.Iwata, M.Isshiki and K.Masumoto

J.Cryst.Growth,115(1991)687.

5. Heat-Temperature of AgGaS2 Single Crystals in Sulfur Atomosphere

Y.Noda, T.Kurasawa, H.Watanabe, Y.Furukawa and K.Masumoto

"Non-Stoichiometry in Semiconductors", ed. K.J.Bachmann, H.-L.Hwang, and C.Schwab,　(Elsevier Science Pubs.B.V.,The Netherlands,1992)p.63.

6. 最新電子材料活用辞典

工業調査会(1992).

7. Preparation and Thermoelectric Properties of Mg2Si1-XGeX(X=0.0〜0.4) Solid Solution Semiconductors

Y.Noda, H.Kon, Y.Furukawa, N.Otsuka, I.Nishida and K.Masumoto

Material Transactions,JIM, 33(1992)845.

8. Temperature Dependence of Thermoelectric Properties of Mg2Si0.6Ge0.4

Y.Noda, H.Kon, Y.Furukawa, I.Nishida and K.Masumoto

Material Transactions,JIM, 33(1992)851.

9. Effects of Heat-Treatments on the Photoluminescence Spectra in AgGaS2

K.Mochizuki, E.Niwa and K.Masumoto

J.Luminescence, 51(1992)231.

10. Crystal Growth and Characterization of AgGaS2

K.Masumoto and K.Mochizuki

Proc.8th Int.Conf.Ternary and Multinary Compounds, Vol.1,(1992)93.

11. Some Characteristics of AgGaS2 Single Crystals grown from the Melt

K.Mochizuki, E.Niwa, H.Iwanaga and K.Masumoto

J.Cryst.Growth,131(1992)41.

12. 中赤外レーザ用Pb1-xCaxS1-ySey系新固溶半導体の固溶領域と格子定数

阿部世嗣，望月勝美，増本　剛

日本金属学会誌，56(1992)1479.

13. 陰イオン交換法による銅の高純度精製

一色　実，T.Kekesi，増本　剛

日本金属学会誌，56(1992)897.

14. Estimation of the Donor Concentration in ZnSe from the Emission related to Donor bound Excitons

M.Isshiki and K.Masumoto

Jpn.J.Appl.Phys.,30(1993)515.

15. Photoluminescence and Acceptor State of Na in ZnSe

M.Isshiki and K.Masumoto

Jpn.J.Appl.Phys.,30(1993)623.

16. Heteroepitaxial Growth of Chalcopyrite-Type CuAlSe2 Compound Semiconductor

K.Kimoto, K.Mochizuki and K.Masumoto

Proc.9th Int.Conf.Ternary and Multinary Compounds, Yokohama, 1993, Jpn. J. Appl. Phys.,32, Suppl.32-3(1993)147.

17. Growth of CdSiAs2 Single Crystals by Chemical Transportation

Y.Noda, S.Oba, T.Kurosawa Y.Furukawa,K.Masumoto and Y.Oka

Proc.9th Int.Conf.Ternary and Multinary Compounds, Yokohama, 1993, Jpn. .Appl. Phys., 32,S uppl.32-3(1993)150.

18. Effect of Heat-treatments on AgGaS2 Photoluminescence

T.Kurasawa, Y.Noda, Y.Furukawa and K.Masumoto

Proc.9th Int.Conf.Ternary and Multinary Compounds, Yokohama, 1993, Jpn. J. Appl. Phys.,32,Suppl.32-3(1993)176.

19. Solid Solubility Determination and Single Crystal Preperation of New Quaternary Solid Solution System of (Pb1-xGex)(S1-zSez)

K.Kimoto, Y.Noda, K.Kumazawa, Skiyosawa, N.Koguchi and K.Masumoto

Proc.9th Int.Conf.Ternary and Multinary Compounds, Yokohama, 1993, Jpn. J. Appl. Phys.,32,Suppl.32-3(1993)187.

20. Defect Levels of AgGaS2 Single Crystals

E.Niwa, K.Mochizuki and K.Masumoto

Proc.9th Int.Conf.Ternary and Multinary Compounds, Yokohama, 1993, Jpn. J. Appl. Phys.,32,Suppl.32-3(1993)612.

21. 中赤外レーザ用Pb1-x(Ca1-ySry)xS系新固溶半導体の固溶領域と格子定数

阿部世嗣，望月勝美，増本　剛

日本金属学会誌，57(1993)848.

22. The Flexural Strength and Electrical Properties of a B-Doped BPSCCO Superconductor

S.Abe, N.Nakamura amd K.Masumoto

Materials Letters, 17(1993)4.

23. Semiconductor Applications

K.Masumoto, A.Katsui and T.Matsuoka

"Intermetallic Compounds - Principles and Practice", ed. J.H.Westbrook and　R.L.Fleischer,　(John Wiley and Sons,Chichester,UK,1994) Vol.1,Chap.15,p.323.

24. Sublimation Growth of High-Purity ZnSe Single Crystals and Photoluminescence

K.Mochizuki,T.Yasuda,Y.Segawa,K.Kimoto and K.Masumoto

J.Cryst.Growth,135(1994)318.

25. Pressure Effects on Optical Properties of AgGaS2

K.Takarabe, S.Hitomi, Y.Mori, S.Minomura, E.Niwa and K.Masumoto

Proc.AIRAPT/APS High Pressure Science and Technology Conference,28 June-2 July 1993,Colorado Springs,Colorado,USA(1994)p.601.

26. ホットウォールエピタキシー法によるPb1-xCaxS系固溶半導体薄膜の作製と評価

阿部世嗣，増本　剛，古川吉孝，望月勝美

日本金属学会誌，58(1994)346.

27. Growth and Characterization of Pb1-xCaxS1-ySey Thin Films Prepared by Hot Wall Epitaxy

S.Abe, K.Masumoto, K.Mochizuki and K.Suto

J.Cryst.Growth, 144(1994)54.

28. Interdiffusion of Ca in PbS/Pb1-xCaxS Quantum Well Structures

S.Abe, K.Masumoto, K.Mochizuki and K.Suto

J.Cryst.Growth, 151(1995)46.

29. Growth and Characterization of Pb1-xSrxS Thin Films Prepared by Hot Wall Epitaxy

S.Abe, K.Masumoto and K.Suto

Proc.10th Int.Conf.Ternary and Multinary Compounds, Stuttgart, Germany, 1995(to be published).

増本 剛 （1996年〜1999年）

1. Growth and characterization of Pb1-xSrxS thin films prepared by hot wall epitaxy
S.Abe, K.Masumoto and K.Suto
Proc. 10th Int. Conf. Ternary and Multinary Compounds, Stuttgart, 1995, Crys. Res.
Technol., 31 (1996) S519.

2. High pressure structural study of I-III-VI2 chalcopyrites
Y.Mori, K.Takarabe, S.Iwamoto, S.Minomura, E.Niwa and K.Masumoto
phys. stat. sol., (b) 198 (1996) 427.

3. Characterization of native dislocations in chalcopyrite AgGaS2 by X-ray topography
I.Yonenaga, K.Sumino, E.Niwa and K.Masumoto
J. Crystal Growth, 167 (1996) 616.

4. Growth and characterization of Pb1-x(Ca1-ySry)xS thin films prepared by hot wall
epitaxy
S.Abe, K.Masumoto and K.Suto
J. Crystal Growth, 173 (1997) 104.

5. Growth and characterization of Bi-doped PbS thin films prepared by hot wall epitaxy
S.Abe, K.Masumoto and K.Suto
J. Crystal Growth, 181 (1997) 367.

6. Resonant raman scattering and its correlation to exciton luminescence in AgGaS2
M.Susaki, K.Wakita, N.Yamamoto, E.Niwa and K.Masumoto
Jpn. J. Appl. Phys., 37 (1998) 847.

7. Optical properties of Pb1-x(Ca1-ySry)xS thin films prepared by hot wall epitaxy
S.Abe, K.Masumoto and K.Suto
Proc. 11th Int. Conf. Ternary and Multinary Compounds, Salford, 1997, Inst. Phys. Conf.
Ser. 152 (1998) 641.

8. Growth and photoluminescence spectra of high quality AgGaS2 single crystals
E.Niwa, K.Masumoto, T.Yasuda, M.Isshiki and Y.Segawa
Proc. 11th Int. Conf. Ternary and Multinary Compounds, Salford, 1997, Inst. Phys. Conf.
Ser. 152 (1998) 409.

9. Excitation spectra of 2.47eV emission band on AgGaS2 single crystals
E.Niwa, T.Yasuda, K.Masumoto, M.Isshiki and Y.Segawa
Proc. 11th Int. Conf. Ternary and Multinary Compounds, Salford, 1997, Inst. Phys. Conf.
Ser. 152 (1998) 473.

10. High pressure investigation of the tetragonal distortion and the anion displacement in
AgGaX２ (X=S, Se, Te)
Y.Mori, S.Iwamoto, K.Takarabe, S.Minomura, E.Niwa and K.Masumoto
Proc. 11th Int. Conf. Ternary and Multinary Compounds, Salford, 1997, Inst. Phys. Conf.
Ser. 152 (1998) 1013.

11. Growth of AgGaS2 single crystals by a self-seeding vertical gradient freezing method
E.Niwa and K.Masumoto
J. Crystal Growth, 192 (1998) 354.

12. Polarized photoluminescence with long lifetime in AgGaS2
J.Nakahara, Y.Narita, K.Itoh, E.Niwa, K.Masumoto and S.Yamamoto
phys. stat. sol., (b) 210 (1998) 479.

13. Compositional plane and properties of solid solution semiconductor Pb1-xCaxS1-ySey for
mid-infrared lasers
S.Abe and K.Masumoto
J. Crystal Growth, 204 (1999) 115.

14. Mid-infrared (5-12-(m) and limited (5.5-8.5-(m) single-knob tuning generated by
difference-frequency mixing in single-crystal AgGaS2
S.Haidar, K.Nakamura, E.Niwa, K.Masumoto and H.Ito
Appl. Opt., 38 (1999) 1798.