三宅秀人、杉山耕一

〒514津市上浜町1515 三重大学工学部電気工学科

tel.:0592-31-9401（三宅）

fax :0592-31-9471

(miyake@sc.elec.mie-u.ac.jp, sugiyama@sc.elec.mie-u.ac.jp)

1) "Phase Diagram of the CuGaS2-In Pseudobinary System";

H.Miyake and K.Sugiyama;

Jpn.J.Appl.Phys., 29 (1990) L998-L1000.

2) "Growth of Bulk CuGaS2 Single Crystals Using Solution Bridgman Method";

H.Miyake and K.Sugiyama,

Jpn.J.Appl.Phys., 29 (1990) L1001-L1003.

3) "Growth of CuGaS2 Single Crystals by Traveling Heater Method";

H.Miyake and K.Sugiyama,

Jpn.J.Appl.Phys., 29 (1990) L1859-L1861.

4) "Solution Growth of CuGaS2 Single Crystals";

H.Miyake and K.Sugiyama, Proc. 8th Int. Conf. Ternary & Multinary Compounds, Kishinev, eds. S.I.Radautsan and C.Schwab, (Shtiintsa Press, Kishinev, 1990) Vol.1, pp.117-120.

5) "Epitaxial Growth of CuAlSe2 on CuGaSe2 Substrates";

K.Sugiyama, K.Mori and H.Miyake,

J.Cryst.Growth, 113 (1991) 390-394.

6) "Study of Fluorination of CdTe Surfaces";

K.Sugiyama, K.Mori andH.Miyake,

Thin Solid Films, 198 (1991) 347-355.

7) "Thermodynamic Study of Equilibrium in the CuGaxIn1-xSe2-I2System";

K.Sugiyama, K.Mori, M.Tajima and H.Miyake,

J.Cryst.Growth, 118 (1992) 41-48.

8) "Photoluminescence Characteristics of CuAlxIn1-xSe2 SolidSolutions Grown by Iodine Transport Technique";

H.Miyake and K.Sugiyama,

J.Appl.Phys., 72 (1992) 3697-3701.

9) "Seeded Growth of CuGaSe2 Single Crystals Using Traveling Heater Method";

H.Miyake, M.Tajima and K.Sugiyama,

J.Cryst.Growth, 125 (1992) 381-383.

10)"THM Growth and Properties of CuInSe2 Single Crystals";

H.Miyake and K.Sugiyama;

J.Cryst.Growth, 125 (1992) 548-552.

11)"ＴＨＭ法によるカルコパイライト型半導体単結晶の作製"；

　 三宅　秀人、杉山　耕一,

日本結晶成長学会誌, Vol.19 (1992) pp.217-223.

12)"Solution Growth of CuGaS2 and CuGaSe2 Using CuI Solvent";

H.Miyake, M.Hata and K.Sugiyama,

J.Cryst.Growth, 130 (1993) 383-388.

13)"Preparation of CuGaxIn1-xS2 Alloys from In Solutions",

H.Miyake, T.Hayashi and K.Sugiyama;

J.Cryst.Growth, 134 (1993) 174-180.

14)"Single Crystal Growth of Cu-III-VI2 Semiconductors by THM";

H.Miyake and K.Sugiyama,

Proc. 9th Int. Conf. Ternary & Multinary Compounds, Yokohama, Jpn.J.Appl.Phys., 32 (1993) Suppl. 32-3, 156-160.

15)"Growth of CuGaS2 Single Crystals by the Traveling Heater Method Using CuI Solvent";

H.Miyake, M.Hata, Y.Hamamura and K.Sugiyama,

J.Cryst.Growth, 144 (1994) 236-242.

16)"Vapor Phase Epitaxy of CuAlS2 on CuGaS2 Substrates by the Iodine Transport Method";

H.Miyake, M.Yamada and K.Sugiyama,

J.Cryst.Growth, 153 (1995) 180-183.

17)"Solution Growth of CuInSe2 from CuSe Solutions";

H.Miyake, H.Ohtake and K.Sugiyama,

J.Cryst.Growth 153 (1995) 180-183.

18)"Phase Relations of CuAlxGa1-xSe2-In System" ;

H.Miyake, T.Mukaiand K.Sugiyama,

Proc. 10th Int. Conf. Ternary & Multinary Compounds, Stuttgart, J.Cryst.Res.& Technol.(1995)(印刷中).