〒162新宿区神楽坂1−3東京理科大学理学部応用物理学科

tel.:03-3260-4271 ext.2242

fax :03-3260-4472

(ando@aix001.rs.kagu.sut.ac.jp)

1."Crystal Growth and Characterization of CdInGaS4 and Rlated Compounds"

S.Endo, S.Ando, H.Matsushita, S,Nomura, T.Irie, H.Nakanishi, Y.Noda,　T.Takizawa and T.Toyoda,

J. Crystal Growth 99 776-780.

2."Study on the Crystal Structure of CdInGaS4 and Cd3InGaS6 by Computer Simulation Method",

H.Matsushita, S.Nomura, S.Ando, S.Endo and T.Irie,

Jpn. Appl. Phys. 29 (1990) L872-L874.

3."Green Emission in CdS/CdInGaS4",

S.Ando, S.Endo, H.Nakanishi and T.Irie,

Jpn. J. Appl. Phys. 30 (1991) 2540-2541.

4. "Edge Emission Enhancement in CdS by Laminated CdInGaS4",

S.Ando, T.Okada, S.Endo, T.Irie, T.Miya and H.Nakanishi,

J.Cryst.Growth 117 (1992) 362-365.

5."A Study on the Crystallographic and Photoluminescent Properties ofCd3InGaS6,��.Crystallographic study",

T.Irie, S.Ando, Y.Noda and S.Endo,

Jpn.Appl.Phys. 31 (1992) 2508-2513.

6."A Study on the Crystallographic and Photoluminescent Properties of　Cd3InGaS6,��.Photoluminescence",

S.Ando, S.Endo, H.Nakanishi and T.Irie,

Jpn.Appl.Phys. 31 (1992) 2508-2513.

7."Green emission of CdS Films Deposited on CdInGaS4 by Evaporation Method",

S.Ando, S.Endo, H.Nakanishi, T.Toyoda and T.Irie,

Jpn.Appl.Phys. 32-2 (1993) 624-627.

8."Optical Properties of ZnxCd1-xInGaS4 System"

S.Ando, S.Endo, H.Nakanishi, T.Toyoda and T.Irie,

Jpn.Appl.Phys. 32-2 (1993) 510-512 .

9."Photothermal Spectroscopy of CdInGaS4 and Related Compound",

S.Ando, K.Kato, M.Sorazawa and T.Toyoda,

J. de Physique 4 (1994) 187-190.

10."Effects of O2 Gas Pressure in Heat Treatment on Surface Morphology and Electric Properties of Ferroelectric Bi4Ti3O12 Thin Films with c-Axis Orientation",

A.Kakimi, S.Okamura, S.Ando and T.Tsukamoto,

Jpn.J.Appl.Phys. 34 (1995) 5193-5197.

11."Properties of Ferroelectric Pb(Zr,Ti)O3 Thin Films on TiSi2/Si Substrates",

H.Hatano, S.Okamura, S.Ando and T.Tsukamoto,

Jpn.J.Appl.Phys. 34 (1995) 5263-5265.