遠藤三郎
〒162新宿区神楽坂1一3東京理科大学工学部電気工学科
tel.:03-3260-4271 ext.3397
fax :03-5261-4805
(endo@elec2f01.ee.kagu.sut.ac.jp)
1. Electrical and Optical Properties of the CuGa(S1-xSex)2 System
H.Matsushita S.Endo H.Nakanishi S.Nomura T. Irie
Jpn. J. Appl. Phys. Vol.29, N03 484-488 (1990)
2. Crystal Growth and Characterization of CdlnGaS4 and Related Compounds
S.Endo S.Ando H.Matsushita S.Nomura T.Irie H.Nakanishi Y.Noda T.Takizawa T.Toyoda
J. Cryst. Growth Vol.99 776-780 (1990)
3. X-ray Photoacoustic Absorption Spectra of CulnSe2
T.Toyoda T.Masujima H.Shiwaku H.Nakanishi S.Endo T. Irie I . Shiozaki
A.Iida H.Kawata M.Ando
J. Cryst. Growth Vol.99 762-765 (1990)
4. The Dependence of Optical Absorption in Bil2Si020 on Temperature
and Hydrostatic Pressure
T.Toyoda H.Nakanishi S.Endo T.Irie
J. Cryst. Growth Vol.99 885-890 (1990)
5. Study on the Crystal Structure of CdlnGaS4 and Cd3lnGaS6
by Computer Simulation Method
H.Matsushita S.Nomura S.Ando S.Endo T.Irie
Jpn. J. Appl. Phys. Vol.29, N0.6 L872-L874 ( 1990)
6. Photoacoustic X-Ray Absorpt ion Near Edge Structure in CulnSe2
T.Toyoda T.Masujima H.Shiwaku H.Kawata M.Ando H.Nakanishi S.Endo T.Irie A. Iida
Springer Series in Optical Science (Photoacoustic and Photothermal Phenomena I I ) Vol.62 235-237 (1990)
7. X-ray Absorption Near Edge Structure(XANES) of CulnSe2, Brass and Phosphor Bronze by Photoacoustic Method
T.Toyoda T.Masujima H.Shiwaku A.Iida H.Kawata M.Ando H.Nakanishi S. Endo T.Irie
Jpn. J. Appl. Phys. Vol.29 Supplement 29-1,255-257 (1990)
8. Thermodynamical Properties of I-III-VI2 Group Chalcopyrite Semiconductors
H.Matsushita S.Endo T.Irie
Jpn. J. Appl. Phys. Vol.30, N0.6, June, 1181-1185
9. Green Emission in CdS/CdlnGaS4
S.Ando S.Endo T.Irie
Jpn. J. Appl. Phys. Vol.30, N0.10, October, 2540-2541 (1991)
10. Raman-Scattering Properties of I-III-VI2 Group Chalcopyrite Semiconductors
H.Matsushita S.Endo T.Irie
Jpn. J. Appl. Phy-s. Vol.31, Part 1, January 18-22 (1992)
11. The Refractive Indices and the Optical Dispersion Parameters in CdlnGaS4
T.Toyoda H.Nakanishi S.Endo T.Irie
Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,
Kishinev, Moldova CIS Vol.1. 429-432 (1992) May
12. Optical Properties of Layered Semiconductor CdlnGaS4 and Related Phenomena
T.Irie S.Endo H.Nakanishi
Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,
Kishinev, Moldova CIS Vol.1, 33-40 (1992) May
13. Anomalous Temperature Dependence of the Electrical Resistivity of
CuGa(S1-xSex) System
S.Endo H.Matsushita H. Nakanishi T. Irie
Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,
Kisllinev, Moldova CIS Vol.1, 125-128 (1992) May
14. The Dependence of Optical Absorption in CdlnGaS4 on Temperature and Hydrostatic Pressure
T.Toyoda H.Nakanishi S.Endo T.Irie
Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,
Kishinev, Moldova CIS Vol.1, 401-404 (1992) May
15. Photoluminescence and Raman Spectra of CulnSe2 Single Crystals
H.Nakanishi T.Maeda S.Ando S.Endo T.Irie H.Tanino T.Yao
Proc. 8th Int. Conf. Ternarv & Multinary Compound, Shtiintsa Press,
Kishinev, Moldova CIS Vol.1, 152-155 (1992) May
16. Raman Spectra of CulnSe2
H.Tanino T.Maeda H.Fuj ikake H.Nakasishi S.Endo T.Irie
Phys. Rev. B Condensed Matter Vol.45, N0.23 15 June 13323-13330 (1992)
17. Edge Emission Enhancement in CdS by Laminated CdlnGaS4
S.Ando T.Okada S.Endo T.Irie T.Miya H.Nakanishi
J. Crystal Growth Vol.117 362-365 (1992) June
18. Study on the Crystallographic Photoluminescent Properties of Cd3lnGaS6.
I. Crystallographic Study
T.Irie S.Ando Y.Noda S.Endo
Jpn. J. Appl. Phys. Vol.31 Part 1, N0.8, August 2508-2513 (1992)
19. Study on the Crystallographic and Photoluminescent Properties of Cd3lnGaS6.
II . Photoluminescence
S.Ando S.Endo H.Nakanishi T.Irie
Jpn. J. Appl. Phys. Vol.31 Part 1, N0.9A, September 2803-2810 (1992)
20. Effects of Oxygen Doping on Bulk Properties of CulnSe2 Crystals
H.Matsushita S.Endo T. Irie
Jpn. J. Appl. Phys. Vol.31 Part 1, N0.9A, Sepbember 2687-2688 (1992)
21. Crystal Growth of CulnSe2 by the Method of Horizontal Bridgman with Two Temperature Zones
H.Matsushita S.Endo T.Irie H.Nakanishi
J. Crystal Growth Vol.128 655-658 (1993)
22. I Hydrostatic Pressur Dependence of the Fundamental Absorption Edges of CdlnGaS4 and Znln2S4
T.Toyoda M.Sorasawa H.Nakanishi S.Endo T. Irie
Jpn. J. Appl. Phys. Vol.32 Suppl. 32-1 291-293 (1993)
23. Preparation and Characterization of Electrodeposited CulnSe2 Thin Films
Y.Sudo S.Endo T.Irie
Jpn. J. Appl. Phys. Vol.32 Part 1, N0.4, April 1562-1567 (1993)
24. Structural and Optical Properties of the Cul-xAgxGaS2 System
H.Matsushita S.Endo T.Irie
Jpn. J. Appl. Phys. Vol.32 Part 2, N0.8A, August LI049-LI050 (1993)
25. Crystal Growth of CulnSe2 by the Method of Horizontal Bridgman with Three Temperature Zones
H.Matsushita T.Suzuki S.Endo T. Irie
Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 99-100 (1993)
26. Electrical and Optical Properties of CulnSe2 Single Crystals with Various Deviations from Stoichiometry
H.Nakanishi T.Sawaya S.Endo T.Irie
Jpn. J. Appl. Phys. Vol.32 Suppl. 39_-3, 200-202 (1993)
27. Photothermal Effect in Compound Semiconductors CdlnGaS4 and Cdln2S4
T.Toyoda M.Sorakawa H.Nakanishi S.Endo T. Irie T.Shigenari
Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 497-500 (1993)
28. Optical Properties of ZnxCdl-xInGaS4 System
S.Ando S.Endo H.Nakanishi T.Toyoda T. Irie
Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 501-502 (1993)
29. Green Emission in CdS Films Deposited on CdlnGaS4 by Evaporation Method
S.Ando S.Endo H.Nakanishi T.Toyoda T. Irie
Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 624-627 (1993)
30. Characterization and Control of the Defects in I-III-VI2 Group
Semiconductors and Related Compounds
T.Irie S.Endo H.Nakanishi: New Functionality Materials, Vol.A
31. Optical and Quantum Structural Properties of Semiconductors 115-120 (1993) Elsevier
Preparation and Characterization of Electrodeposited CuGaxInl-xSe2 Thin Films
T.Matsuoka Y.Nagahori S.Endo
Jpn. J. Appl. Phys. Vol.33 Part 1, N0.11, November 6105-6110 (1994)
32. Electrical and Optical Properties of CulnSe2 Single Crystals
Prepared by Three-Temperature-Horizontal Bridgman Method
H.Matsushita T.Suzuki S.Endo T. Irie
Jpn. J. Appl. Phvs. Vol.34 Part 1, N0.7A, July.3774-3477 (1995)
32. Electrical, Optical and Sohottky Properties of AgGa(S1-xSex)2 System
H.Matsushita, O.Shiono, S.Endo T. Irie
Jpn. J. Appl. Phys. Vol.34 Part 1, N0.10, October 5546-5549 (1995)
33. Ti02 Ceramic Substrate and it's Properties for High-Current Discharge PIasma Source
S.Kashiwabara R.Fujimoto S.Endo T.Irie
Trans. IEE of Japan, Vol.115-A, N0.9, Septernber 866-873 (1995)
著書
半導体基礎工学(II) 入江泰三、遠藤三郎 共著 工学図書(平成5年)