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  • 遠藤三郎

    〒162新宿区神楽坂1一3東京理科大学工学部電気工学科

    tel.:03-3260-4271 ext.3397

    fax :03-5261-4805

    (endo@elec2f01.ee.kagu.sut.ac.jp)


    1. Electrical and Optical Properties of the CuGa(S1-xSex)2 System

    H.Matsushita S.Endo H.Nakanishi S.Nomura T. Irie

    Jpn. J. Appl. Phys. Vol.29, N03 484-488 (1990)


    2. Crystal Growth and Characterization of CdlnGaS4 and Related Compounds

    S.Endo S.Ando H.Matsushita S.Nomura T.Irie H.Nakanishi Y.Noda T.Takizawa T.Toyoda

    J. Cryst. Growth Vol.99 776-780 (1990)


    3. X-ray Photoacoustic Absorption Spectra of CulnSe2

    T.Toyoda T.Masujima H.Shiwaku H.Nakanishi S.Endo T. Irie I . Shiozaki

    A.Iida H.Kawata M.Ando

    J. Cryst. Growth Vol.99 762-765 (1990)


    4. The Dependence of Optical Absorption in Bil2Si020 on Temperature

    and Hydrostatic Pressure

    T.Toyoda H.Nakanishi S.Endo T.Irie

    J. Cryst. Growth Vol.99 885-890 (1990)


    5. Study on the Crystal Structure of CdlnGaS4 and Cd3lnGaS6

    by Computer Simulation Method

    H.Matsushita S.Nomura S.Ando S.Endo T.Irie

    Jpn. J. Appl. Phys. Vol.29, N0.6 L872-L874 ( 1990)


    6. Photoacoustic X-Ray Absorpt ion Near Edge Structure in CulnSe2

    T.Toyoda T.Masujima H.Shiwaku H.Kawata M.Ando H.Nakanishi S.Endo T.Irie A. Iida

    Springer Series in Optical Science (Photoacoustic and Photothermal Phenomena I I ) Vol.62 235-237 (1990)


    7. X-ray Absorption Near Edge Structure(XANES) of CulnSe2, Brass and Phosphor Bronze by Photoacoustic Method

    T.Toyoda T.Masujima H.Shiwaku A.Iida H.Kawata M.Ando H.Nakanishi S. Endo T.Irie

    Jpn. J. Appl. Phys. Vol.29 Supplement 29-1,255-257 (1990)


    8. Thermodynamical Properties of I-III-VI2 Group Chalcopyrite Semiconductors

    H.Matsushita S.Endo T.Irie

    Jpn. J. Appl. Phys. Vol.30, N0.6, June, 1181-1185


    9. Green Emission in CdS/CdlnGaS4

    S.Ando S.Endo T.Irie

    Jpn. J. Appl. Phys. Vol.30, N0.10, October, 2540-2541 (1991)


    10. Raman-Scattering Properties of I-III-VI2 Group Chalcopyrite Semiconductors

    H.Matsushita S.Endo T.Irie

    Jpn. J. Appl. Phy-s. Vol.31, Part 1, January 18-22 (1992)


    11. The Refractive Indices and the Optical Dispersion Parameters in CdlnGaS4

    T.Toyoda H.Nakanishi S.Endo T.Irie

    Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,

    Kishinev, Moldova CIS Vol.1. 429-432 (1992) May


    12. Optical Properties of Layered Semiconductor CdlnGaS4 and Related Phenomena

    T.Irie S.Endo H.Nakanishi

    Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,

    Kishinev, Moldova CIS Vol.1, 33-40 (1992) May


    13. Anomalous Temperature Dependence of the Electrical Resistivity of

    CuGa(S1-xSex) System

    S.Endo H.Matsushita H. Nakanishi T. Irie

    Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,

    Kisllinev, Moldova CIS Vol.1, 125-128 (1992) May


    14. The Dependence of Optical Absorption in CdlnGaS4 on Temperature and Hydrostatic Pressure

    T.Toyoda H.Nakanishi S.Endo T.Irie

    Proc. 8th Int. Conf. Ternary & Multinary Compound, Shtiintsa Press,

    Kishinev, Moldova CIS Vol.1, 401-404 (1992) May


    15. Photoluminescence and Raman Spectra of CulnSe2 Single Crystals

    H.Nakanishi T.Maeda S.Ando S.Endo T.Irie H.Tanino T.Yao

    Proc. 8th Int. Conf. Ternarv & Multinary Compound, Shtiintsa Press,

    Kishinev, Moldova CIS Vol.1, 152-155 (1992) May


    16. Raman Spectra of CulnSe2

    H.Tanino T.Maeda H.Fuj ikake H.Nakasishi S.Endo T.Irie

    Phys. Rev. B Condensed Matter Vol.45, N0.23 15 June 13323-13330 (1992)


    17. Edge Emission Enhancement in CdS by Laminated CdlnGaS4

    S.Ando T.Okada S.Endo T.Irie T.Miya H.Nakanishi

    J. Crystal Growth Vol.117 362-365 (1992) June


    18. Study on the Crystallographic Photoluminescent Properties of Cd3lnGaS6.

    I. Crystallographic Study

    T.Irie S.Ando Y.Noda S.Endo

    Jpn. J. Appl. Phys. Vol.31 Part 1, N0.8, August 2508-2513 (1992)


    19. Study on the Crystallographic and Photoluminescent Properties of Cd3lnGaS6.

    II . Photoluminescence

    S.Ando S.Endo H.Nakanishi T.Irie

    Jpn. J. Appl. Phys. Vol.31 Part 1, N0.9A, September 2803-2810 (1992)


    20. Effects of Oxygen Doping on Bulk Properties of CulnSe2 Crystals

    H.Matsushita S.Endo T. Irie

    Jpn. J. Appl. Phys. Vol.31 Part 1, N0.9A, Sepbember 2687-2688 (1992)


    21. Crystal Growth of CulnSe2 by the Method of Horizontal Bridgman with Two Temperature Zones

    H.Matsushita S.Endo T.Irie H.Nakanishi

    J. Crystal Growth Vol.128 655-658 (1993)


    22. I Hydrostatic Pressur Dependence of the Fundamental Absorption Edges of CdlnGaS4 and Znln2S4

    T.Toyoda M.Sorasawa H.Nakanishi S.Endo T. Irie

    Jpn. J. Appl. Phys. Vol.32 Suppl. 32-1 291-293 (1993)


    23. Preparation and Characterization of Electrodeposited CulnSe2 Thin Films

    Y.Sudo S.Endo T.Irie

    Jpn. J. Appl. Phys. Vol.32 Part 1, N0.4, April 1562-1567 (1993)


    24. Structural and Optical Properties of the Cul-xAgxGaS2 System

    H.Matsushita S.Endo T.Irie

    Jpn. J. Appl. Phys. Vol.32 Part 2, N0.8A, August LI049-LI050 (1993)


    25. Crystal Growth of CulnSe2 by the Method of Horizontal Bridgman with Three Temperature Zones

    H.Matsushita T.Suzuki S.Endo T. Irie

    Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 99-100 (1993)


    26. Electrical and Optical Properties of CulnSe2 Single Crystals with Various Deviations from Stoichiometry

    H.Nakanishi T.Sawaya S.Endo T.Irie

    Jpn. J. Appl. Phys. Vol.32 Suppl. 39_-3, 200-202 (1993)


    27. Photothermal Effect in Compound Semiconductors CdlnGaS4 and Cdln2S4

    T.Toyoda M.Sorakawa H.Nakanishi S.Endo T. Irie T.Shigenari

    Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 497-500 (1993)


    28. Optical Properties of ZnxCdl-xInGaS4 System

    S.Ando S.Endo H.Nakanishi T.Toyoda T. Irie

    Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 501-502 (1993)


    29. Green Emission in CdS Films Deposited on CdlnGaS4 by Evaporation Method

    S.Ando S.Endo H.Nakanishi T.Toyoda T. Irie

    Jpn. J. Appl. Phys. Vol.32 Suppl. 32-3, 624-627 (1993)


    30. Characterization and Control of the Defects in I-III-VI2 Group

    Semiconductors and Related Compounds

    T.Irie S.Endo H.Nakanishi: New Functionality Materials, Vol.A


    31. Optical and Quantum Structural Properties of Semiconductors 115-120 (1993) Elsevier

    Preparation and Characterization of Electrodeposited CuGaxInl-xSe2 Thin Films

    T.Matsuoka Y.Nagahori S.Endo

    Jpn. J. Appl. Phys. Vol.33 Part 1, N0.11, November 6105-6110 (1994)


    32. Electrical and Optical Properties of CulnSe2 Single Crystals

    Prepared by Three-Temperature-Horizontal Bridgman Method

    H.Matsushita T.Suzuki S.Endo T. Irie

    Jpn. J. Appl. Phvs. Vol.34 Part 1, N0.7A, July.3774-3477 (1995)


    32. Electrical, Optical and Sohottky Properties of AgGa(S1-xSex)2 System

    H.Matsushita, O.Shiono, S.Endo T. Irie

    Jpn. J. Appl. Phys. Vol.34 Part 1, N0.10, October 5546-5549 (1995)


    33. Ti02 Ceramic Substrate and it's Properties for High-Current Discharge PIasma Source

    S.Kashiwabara R.Fujimoto S.Endo T.Irie

    Trans. IEE of Japan, Vol.115-A, N0.9, Septernber 866-873 (1995)


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