山口利幸
〒644 御坊市名田町野島77 和歌山高専電気工学科
tel.:0738-29-2301
fax :0738-29-2574
1. "Thin films of CulnSe2 produced by rf sputtering
with intentional oxygen doping":
T.YamaguchiJ.Matsufilsa, H.Kabasawa and A.Yoshida,
J. Appl. Phys. 69(1991)pp.7714-7719.
2. "Thermal Crystallization of Copper Indium Diselenide
Films in Flowing or Pressurized Atmosphere":
T.Yamaguchi, Y.Baba, M.Nishimura, J.Matsufusa and A.Yoshida,
Physica Status Solidi (a) 128(1991)pp.455 - 463.
3. "Thin films of CulnSe2 prepared by RF sputtering
from various compositional powder targets" :
T.Yamaguchi, J.Matsufusa and A.Yoshida,
Solar Energy Materials and Solar Cells 27(1992)pp.25-35.
4. "Optical Transitions in RF Sputtered CuInxGa1-xSe2
Thin Films":
T.Yamaguchi, J.Matsufusa and AYoshida,
Jpn. J. Appl. Phys. 31(1992)pp.L703- L705.
5. "Thermal crystallization of copper indium diselenide
films with oxygen- doped layer":
T.Yamaguchi, J.Matsufilsa and A.Yoshida,
Jpn. J. Appl. Phys. 31(1992)pp.2877- 2882.
6. "Structural properties of CulnxGal-xSe2 thin films
prepared by rf sputtering":
T.Yamaguchi, J.Matsufusa and A.Yoshida,
J. Appl. Phys. 72(1992)pp.5657-5662.
7. "Optical Properties in RF Sputtered CulnxGa1-xSe2
Thin Films":
T.Yamaguchi, J.Matsuhsa and A.Yoshida,
Applied Surface Science 70/71(1993)pp.669- 674.
8. "Preparation and characterization of CulnxGa1-xSe2
thin films crystauized by annealing":
T.Yamaguchi, M.Suzuki and A.Yoshida,
Jpn. J. Appl. Phys. 32(1993)Suppl.32-3, pp.62- 64.
9. "PREPARATION OF CulnxGal-xSe2 THIN FILMS ON Si SUBSTRATES":
Y.Yamamoto, T.Yamaguchi, M.Suzuki, Y.Demizu and A.Yoshida,
Proceedings of the First World Conference on Photovoltaic
Energy Conversion(IEEE, New York, 1994)pp.168- 171.
10. "Influence of precursor structure on the properties
of Cu(In,Ga)Se2 thin films by thermal crystallization":
T.Yamaguchi, M.Suznki, Y.Yamamoto, Y.Demizu, T.Tanaka and
A.Yoshida,
J. Crystal Research and Tech. (1995) (in press).
11. "Characterization of CulnSe2 thin films prepared
by Excimer Laser Ablation":
Y.Yamamoto, T.Yamaguchi, T.Tanaka, Y.Demizu, A.Ganjoo and
A.Yoshida,
J. Crystal Research and Tech. (1995) (in press).
12."FABRICATION AND CHARACTER~ATION OF Culn(SxSel-x)2
THIN FILMS BY RF SPUTTERlNG":
Y.Yamamoto, T.Yamaguchi, T.Tanaka, Y.Demizu, A.Ganjoo and
A.Yoshida,
Thin Solid Films(1995) (in press).
研 究 業 績 一 覧
平成12年1月26日
和歌山工業高等専門学校
電気工学科 助教授
山 口 利 幸
1. T.Yamaguchi, J.Matsufusa, H.Kabasawa and A.Yoshida, "Thin
films of CuInSe2 produced by rf sputtering with intentional
oxygen doping", Journal of Applied Physics Vol.69(1991)pp.7714-7719.
2. T.Yamaguchi, Y.Baba, M.Nishimura, J.Matsufusa and A.Yoshida,"Thermal
Crystallization of Copper Indium Diselenide Films in Flowing
or Pressurized Atmosphere", Physica Status Solidi (a) Vol.128(1991)pp.455-463.
3. T.Yamaguchi, J.Matsufusa and A.Yoshida, "Thin films of
CuInSe2 prepared by RF sputtering from various compositional
powder targets", Solar Energy Materials and Solar Cells Vol.27(1992)pp.25-35.
4. T.Yamaguchi, J.Matsufusa and A.Yoshida,"Optical Transitions
in RF Sputtered CuInxGa1-xSe2 Thin Films", Japanese Journal
of Applied Physics Vol.31(1992)pp.L703-L705.
5. T.Yamaguchi, J.Matsufusa and A.Yoshida, "Thermal crystallization
of copper indium diselenide films with oxygen-doped layer",
Japanese Journal of Applied Physics Vol.31(1992)pp.2877-2882.
6. T.Yamaguchi, J.Matsufusa and A.Yoshida, "Structural properties
of CuInxGa1-xSe2 thin films prepared by rf sputtering", Journal
of Applied Physics Vol.72(1992)pp.5657-5662.
7. T.Yamaguchi, J.Matsufusa and A.Yoshida,"Optical Properties
in RF Sputtered CuInxGa1-xSe2 Thin Films", Applied Surface
Science Vol.70/71(1993)pp.669-674.
8. T.Yamaguchi, M.Suzuki and A.Yoshida, "Preparation and
characterization of CuInxGa1-xSe2 thin films crystallized by
annealing", Japanese Journal of Applied Physics Vol.32(1993)Suppl.32-3,
pp.62-64.
9. Y.Yamamoto, T.Yamaguchi, M.Suzuki, Y.Demizu and A.Yoshida,
"PREPARATION OF CuInxGa1-xSe2 THIN FILMS ON Si SUBSTRATES",Proceedings
of the First World Conference on Photovoltaic Energy Conversion(IEEE,
New York, 1994)pp.168-171.
10. T.Tanaka, Y.Demizu, T.Yamaguchi and A.Yoshida, "Preparation
of Ordered Vacancy Chalcopyrite Thin Films by RF Sputtering from
CuInSe2 Target with Na2Se", Japanese Journal of Applied
Physics Vol.35 (1996)pp.2779-2781.
11. T.Yamaguchi, M.Suzuki, Y.Yamamoto, Y.Demizu, T.Tanaka and
A.Yoshida,"Influence of precursor structure on the properties
of Cu(In,Ga)Se2 thin films by thermal crystallization", Journal
of Crystal Research and Technology Vol.31(1996)Spec. Issue 2,
pp.481-484.
12. Y.Yamamoto, T.Yamaguchi, T.Tanaka, Y.Demizu, A.Ganjoo and
A.Yoshida, "Characterization of CuInSe2 thin films prepared
by Excimer Laser Ablation",Journal of Crystal Research and
Technology Vol.31(1996) Spec. Issue 2, pp.473-476.
13. T.Yamaguchi, Y.Yamamoto, T.Tanaka, Y.Demizu and A.Yoshida,"(Cd,Zn)S
thin films prepared by chemical bath deposition for photovoltaic
devices", Thin Solid Films Vol.281/282(1996)pp.375-378.
14. Y.Yamamoto, T.Yamaguchi, T.Tanaka, Y.Demizu, A.Ganjoo and
A.Yoshida,"Fabrication and characterization of CuIn(SxSe1-x)2
thin films by RF sputtering", Thin Solid Films Vol.281/282(1996)pp.372-374.
15. T.Yamaguchi, Y.Yamamoto, T.Tanaka, Y.Demizu and A.Yoshida,
"Large Grain Growth in Cu(In,Ga)Se2 Thin Films with Band
Gap of around 1.4eV by Thermal Crystallization in Saturated Se
Vapors" Japanese Journal of Applied Physics Vol.35 (1996)
pp.L1618-L1621.
16. T.Tanaka, Y.Demizu, T.Yamaguchi and A.Yoshida, "Preparation
of Cu(In,Ga)2Se3.5 thin films by radio frequency sputtering from
stoichiometric Cu(In,Ga)Se2 and Na2Se mixture target", Journal
of Applied Physics Vol.81(1997)pp.7619-7622.
17. Y.Yamamoto, T.Yamaguchi, T.Tanaka, N.Tanahashi and A.Yoshida,
"Characterization of CuInS2 thin films prepared by sputtering
from binary compounds", Solar Energy Materials and Solar
Cells Vol.49(1997)pp.399-405.
18. T.Yamaguchi, Y.Yamamoto, T.Tanaka, N.Tanahashi and A.Yoshida,"Influence
of annealing temperature on the properties of Cu(In,Ga)Se2 thin
films by thermal crystallization in Se vapour", Solar Energy
Materials and Solar Cells Vol.50(1998)pp.1-6.
19. T.Tanaka, N.Tanahashi, A.Yoshida, Y.Yamamoto and T.Yamaguchi,
"Characterization of Cu(In,Ga)2Se3.5 thin films prepared
by rf sputtering from Cu(In,Ga)Se2 with Na2Se", Solar Energy
Materials and Solar Cells Vol.50(1998)pp.13-18.
20. A.Yoshida, N.Tanahashi,T.Tanaka, Y.Demizu, Y.Yamamoto and
T.Yamaguchi,"Preparation of CuInSe2 thin films with large
grain by excimer laser ablation",Solar Energy Materials and
Solar Cells Vol.50(1998)pp.7-12.
21. T.Yamaguchi, Y.Yamamoto and A.Yoshida, "Characterization
of Cu(In,Ga)Se2 thin films prepared by thermal crystallization
of evaporated amorphous-like precursor with Ga/(In+Ga)=0.6",
Ternary and Multinary Compounds (Institute of Physics Publishing,
1998)pp.357-360.
22. T.Tanaka, T.Yamaguchi and A.Yoshida,"Influence of incorporation
of Na on CuInSe2 thin films", Ternary and Multinary Compounds
(Institute of Physics Publishing, 1998)pp.329-332.
23. T.Tanaka, Y.Kitamura, T.Yamaguchi and A.Yoshida, "Characterization
of CuInSe2 thin films fabricated by rf sputtering with alkali
metals", Proceedings of the 2nd World Conference on Photovoltaic
Solar Energy Conversion(1999)pp.608-611.
24.T.Yamaguchi, Y.Yamamoto, T.Tanaka and A.Yoshida, "Preparation
and characterization of (Cd,Zn)S thin films by chemical bath deposition
for photovoltaic devices", Thin Solid Films Vol.343/344
(1999) pp.516-519.
25. T.Tanaka, T.Yamaguchi and A.Yoshida, "Effect of substrate
temperature on properties of thin films prepared by RF sputtering
from CuInSe2 target with Na2Se", Thin Solid Films Vol.343/344(1999)
pp.320-323.
26. Y.Yamamoto, T.Yamaguchi and A.Yoshida, "Preparation of
CuIn(SxSe1-x)2 thin films by excimer laser ablation from binary
compounds", Thin Solid Films Vol.343/344 (1999)pp.199-201.
27. T.Yamaguchi, Y.Yamamoto and A.Yoshida,"Structural change
in ZnO:Al thin films prepared by rf magnetron sputtering",
Extended abstracts of the 18th Electronic Materials Symposium(Shirahama,June
30-July 2, 1999)pp.229-230.