山本哲也

〒782-8502　高知県香美郡土佐山田町宮ノ口185番地

高知工科大学電子・光システム工学科
高知工科大学大学院工学研究科基盤工学専攻

TEL: 0887-57-2112

FAX: 0887-57-2120

(yamateko@ele.kochi-tech.ac.jp)

1. PAPER:

* Tetsuya Yamamoto, Ilka V. Luck and Roland Scheer
"Materials Design of n-Type CuInS2 Thin Films Using Zn or Cd Speices"
to be published in Appl. Surf. Sci.

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* Tetsuya Yamamoto, Koichi Fukuzaki and Shigemi Kohiki
"Influence of incorporation of Na on p-type CuInS2 thin films"
to be published in Appl. Surf. Sci.

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* T. Yamamoto and H. Katayama-Yoshida
"Effects of oxygen incorporation in p-type AlN crystals doped with carbon
species",
to be published in January, 2000 in Physica B

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* T. Yamamoto, I. V. Luck, R. Scheer, and H. Katayama-Yoshida
"Differences in the electronic structures and compensation mechanism
between n-type Zn- and Cd-doped CuInS2 crystals",
to be published in January, 2000 in Physica B

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* H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita
" Codoping in wide band-gap semiconductors",
Inst. Phys. Conf. Ser. 162 (1999) 747-756.
25Th Int. Symp. Compound Semiconductors, Nara, Japan, 12-16 October 1998.
Invited.

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* 福崎浩一，古曵重美，山本哲也，渡辺隆行，吉川英樹，福島整，小島勇夫
K. Fukusaki, S. Kohiki, T. Yamamoto, T. Watanabe, H. Yoshikawa, S.
Fukushima and I. Kojima
カルコパイライト型 CuInS2 薄膜表面のＸ線光電子分光と第一原理バンド計算、
X-Ray Photoelectron Spectroscopy and ab-initio Electronic Band Structure
Calculation of
Chalcopyrite Structure CuInS2 Thin Film Surfaces, Ｘ線分析の進歩 30 (1999)
111-121.

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* T. Yamamoto and H. Katayama-Yoshida、
" Solution Using a Codoping Method to Unipolarity for the Fabrication of
p-Type ZnO",
Jpn. J. Appl. Phys. 38 (1999) L166-L169.

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* T. Yamamoto,
"Effects of Na Incorporation in p-Type CuInS2",
Jpn. J. Appl. Phys. 37 (1998) L1478-L1480.

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* H. Katayama-Yoshida, T. Nishimatsu, T. Yamamoto and N. Orita,
"Comparison Between the Thoretical Prediction of Codoping and the Recent
Experimental Evidences
in p-type Gan, AlN, ZnSe, CuInS2 and n-type Diamond",
phys. stat. sol.(b) 210 (1998) 429-436., 8th Int. Conf. Shallow-Level
Centers in Semiconductors,
Montpellier, 1998. Invited.

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* T. Yamamoto and H. Katayama-Yoshida、
“A CODOPING METHOD OF FABRICATING HIGH-CONDUCTIVITY P-TYPE SEMICONDUCTORS
WITH A WIDE-BAND GAP BY
AB-INITIO ELECTRONIC STRUCTURE CALCULATIONS",
Proc. of The 24th Int. Conf. on the Physics of Semiconductors, (1998).

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* T. Yamamoto and H. Katayama-Yoshida,
"Role of n-type Codopants on Enhancing p-type Dopants Incorporation in
p-type Codoped ZnSe",
Mater. Res. Soc. Proc. 510 (1998) 67-72.

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* T. Yamamoto and H. Katayama-Yoshida,
"Role of Cl or I Codoping on Enhancing Li doping in ZnSe",
Jpn. J. Appl. Phys. 37(1998) L910-L912.

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* T. Yamamoto and H. Katayama-Yoshida,
" A CODOPING METHOD IN CuInS2 PROPOSED BY ab initio ELECTRONIC-STRUCTURE
CALCULATIONS",
Inst. Phys. Conf. Ser. 152 (1998) 37-41.
11Th Int. Conf. Ternary and Multinary Compounds, Salford, 1997. Invited.

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* H. Tanaka, H. Harima, T. Yamamoto, H. Katayama-Yoshida, Y. Nakata and Y.
Hirotsu,
" Theoretical study of electronic band structures and magnetic property of
Fe16N2 based on FLAPW calculations ",
J. Magnetism and Magnetic Materials, 177-181 (1998) 1468-1469.

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* T. Yamamoto and H. Katayama-Yoshida,
" Electronic structures of p-type GaN codoped with Be or Mg as the
acceptors and Si or O
as the donor codopants ", Journal of Crystal Growth, 189/190 (1998)
532-536.

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* T. Yamamoto and H. Katayama-Yoshida,
"INFLUENCE OF INTRINSIC DEFECTS AND S SUBSTITUTIONS ON ELECTRICAL
PROPERTIES OF CHALCOPYRITE CuInS2 COMPOUNDS",
7th Int. Conf. on Shallow-Level Centers in Semiconductors, Amsterdam, 1996
(World Scientific, Singapore, 1997) pp. 477-82.

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* H. Katayama-Yoshida and T. Yamamoto,
"New Doping Method in Semiconductors Proposed by ab initio Electronic
Calculation",
Proc. of the 1997 Inter. Conf. on SOLID STATE DEVICES AND MATERIALS,
HAMAMATSU, (1997) 32-63. Invited.

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* T. Yamamoto and H. Katayama-Yoshida,
"A Codoping Method in GaN Proposed by ab initio Electronic-Structure
Calculations",
Materials Science Forum 258-263 (1997) 1185-1190.

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* T. Yamamoto and H. Katayama-Yoshida,
"Control of valence states by a codoping method in CuInS2",
Solar Energy Materials and Solar Cells, 49 (1997) 391-397.

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* T. Yamamoto and H. Katayama-Yoshida,
"CONTROL OF VALENCE STATES BY A CODOPING METHOD IN P-TYPE GaN MATERIALS
",
Mater. Res. Soc. Proc. 468 (1998) 105-110.

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* H. Katayama-Yoshida and T. Yamamoto,
"Materials Design of the Codoping for the Fabrication of Low-resistivity
p-type ZnSe and GaN by ab-initio Electronic Structure Calculations",
phys. Stat. Sol. (b) 202, (1997) 763-773.

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* T. Yamamoto and H. Katayama-Yoshida,
"Materials Design for the Fabrication of Low-resistivity p-Type GaN Using
a Codoping Method",
Jpn. J. Appl. Phys. 36 (1997) L180-L183.

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* T. Yamamoto and H. Katayama-Yoshida ,
"p-Type Doping of Group V Elements in CuInS2",
Jpn. J. Appl. Phys. 36 (1996) L1562-L1565.

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* T. Yamamoto and H. Katayama-Yoshida,
"Electronic Structure of p-Type CuInS2",
Mater. Res. Soc. Proc. 426 (1996) 201-206.

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* T. Yamamoto and H. Katayama-Yoshida,
"Electronic Structures and Effects of S Substitutions in
CuIn(S0.875X0.125)2 (X=O, N, P, C, Si or B)",
Jpn. J. Appl. Phys. 35 (1996) L370-L373.

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* T. Yamamoto and H. Katayama-Yoshida,
"New Functionality of Magnetic-Semiconductor-Hybrid Quantum-Dot",
応用磁気研究会資料, MSJ 92-5

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* T. Yamamoto and H. Katayama-Yoshida,
"Physics and Control of Conduction Type in CuInS2 with Defect Chalcopyr
ite
Structure",
Jpn. J. Appl. Phys. 34 (1995) L1584-L1587.

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* T. Yamamoto and H. Katayama-Yoshida,
"THE ELECTRONIC STRUCTURE OF NON-STOICHIOMETRIC CuInS2 AND THE STUDY OF
DEFECTS LEVELS OF CuInS2 WITH
CHALCOPYRITE STRUCTURE",
Crystal Research and Technology, 31 (1995) 97-100.

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* T. Yamamoto and H. Katayama-Yoshida,
"INFLUENCE OF INTRINSIC DEFECTS ON THE ELECTRONIC STRUCTURE OF
NON-STOICHIOMETRIC CuInS2 CHALCOPYRITE STRUCTURE",
Materials Science Forum, Switzerland 196-201 (1996) 1667-1672.

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* Fusayoshi J. Ohkawa and Tetsuya Yamamoto,
"ATTRACTIVE INTERACTIONS DUE TO RKKY EXCHANGE INTERACTIONS IN HEAVY
ELECTRON SUPERCONDUCTORS",
Physica 148B (1987) 84-86.

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* T. Yamamoto and F. J. Ohkawa,
"Competition between Kondo Effect and RKKY Exchange Interaction in Kondo
Lattices. ",
J. Phys. Soc. Jpn, 57 (1988) 3562-3567.

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２．　BOOK：
A8.6 T.Yamamoto and H. Katayama-Yoshida:
Theory of doping in GaN and related compounds
Properties, Processing and Applications of Gallium Nitride and Related
Compounds
published by INSPEC, The Institution of Electrical Engineers (IEE), Londn,
United Kingdom.
Edited by:
J. H. Edgar, Kansas State University, USA
S. Strite, IBM Zurich, Switzerland
I. Akasaki > H.Amano, Meijo University, Japan

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３． REVIEW：
* Shigemi Kohiki, Koichi Fukuzaki and Testuya Yamamoto
"Solar Cell of New Construction",
Function > Materials, vol. 19, No.11, pp. 5-12 (1999)
古曳重美、福崎浩一、山本哲也
"新構造化合物系薄膜太陽電池"
機能材料　第１９巻第１１号 pp.5-12 (1999)

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* 吉田博、西松毅、山本哲也、織田望：
最近の研究、半導体における第１原理計算からの物質設計、
まてりあ第３８巻第２号 (1999) 134-143.

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* M. Henini,
R&D provides NTT and Asahi`s foundations,
III-Vs Review, 12 (1998) 38-43.

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* T. Yamamoto and H. Katayama-Yoshida,
"Control of Valence States by a Codoping Method in Wide-Bnad-Gap
Semiconductors",
Solid State Physics, in Japanese, 32(1997) 409-416.

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